Radiation effects of 50-MeV protons on PNP bipolar junction transistors

Abstract

The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

“…Numerous researchers have extensively investigated the effects of these forms of radiations on silicon bipolar junction transistors (BJTs). [9] Notably, existing literature shows that there are relatively few studies on the sensitivity of 100-MeV proton irradiation to SiGe HBT SEEs, especially in low temperature environment. Within the context of space irradiation environments, protons account for over 90 percent of the total irradiation particles.…”

Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory

“…Some findings suggest that the pre-irradiation total ionizing dose leads to an increasing trend in the SEU cross-section of six-transistor SRAM [12]. Additionally, there is evidence indicating "imprinting effects" in SRAM, wherein the sensitivity to SEE exhibits a certain dependence on stored data patterns [13].…”