Radiation effects in nitrided oxides

Terry, Fred L.; Aucoin, Richard; Naiman, M.; Senturia, S.D.

doi:10.1109/edl.1983.25700

Cited by 131 publications

(17 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Manuscript submitted Sept. 9,1985; revised manuscript received Jan. 3, 1986. The Massachusetts Institute of Technology assisted in meeting the publication costs of this article.…”

Section: Acknowledgmentsmentioning

confidence: 99%

An Investigation of Fixed Charge Buildup in Nitrided Oxides

Ruggles

Monkowski

1986

J. Electrochem. Soc.

View full text Add to dashboard Cite

Fixed charge buildup has been studied in nitrided oxides. Oxides were grown at 1000~ in dry, wet, and HC1 containing ambients. Nitridation was carried out in pure NH:~ at temperatures from 950 ~ to 1150~ for 10, 30, 90, and 240 min. In many cases, thermal nitridation was found to cause fixed positive charge buildup in the films, resulting in negative shifts in flatband voltage. Under appropriate conditions, however, the charge buildup reverses, and VF, approaches prenitridation values as nitridation proceeds. The rates of charge buildup and subsequent relaxation are highly dependent on nitridation conditions and initial oxide thickness, with no significant dependence on oxide growth conditions. The current mode] for positive charge buildup in nitrided oxides, based on dissociation of Si-O bonds caused by hydrogen gas, is found to be incomplete and probably incorrect. Irradiation experiments were performed at doses of 104-10 ~ rad. Thermal nitridation was found to be capable of providing improved resistance to radiation-induced positive charge buildup in some cases.

show abstract

“…Manuscript submitted Sept. 9,1985; revised manuscript received Jan. 3, 1986. The Massachusetts Institute of Technology assisted in meeting the publication costs of this article.…”

Section: Acknowledgmentsmentioning

confidence: 99%

An Investigation of Fixed Charge Buildup in Nitrided Oxides

Ruggles

Monkowski

1986

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5] The incorporation of nitrogen at the oxide-silicon interface is considered to improve its dielectric properties, such as a charge to breakdown and immunity to hot carrier injection. 3,4 Various researchers have reported on the oxynitridation process of silicon with a conventional furnace or a flash lamp reactor in nitrous oxide gas.…”

mentioning

confidence: 99%

Oxynitridation of silicon by remote-plasma excited nitrogen and oxygen

Saito

1996

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…These films exhibit outstanding properties in diffusion barrier of impurities, high-temperature oxidation resistance, great durability in plasma and ion processes, and radiation hardness (3,4,5,6]. Various applications of these films have been reported including the selective oxidation mask [7], the tunneling insulator [8,9], the avalanche barrier of E 2 PROM [10], the dynamic RAM capacitor [11], the self-aligned contact [12] and the gate dielectric for submicron MOS devices [1, 13 14) As thermal nitridation Si requires a temperature higher than 1000 0 C. which will not be compatible with VLSI process to be used in the near future, the authors first reported a plasma technique for lowering the nitridation temperature [15].…”

Section: Introductionmentioning

confidence: 99%

Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide

1984

View full text Add to dashboard Cite

Effects of plasma on direct nitridation of Si and Si0 2 have been investigated. The reactor consisted of a quartz tube, SiC-coated carbonsusceptors and an RF-induction coil. The electrical probe technique was used to detect floating potential of the susceptor having Si substrates. The voltage distribution between the susceptor and plasma is influenced by nitridation ambient, pressure, reactor geometry and RF power. The predominant species in NH 3 plasma is NH radicals which are thought to be negatively charged in an ion sheath formed around the susceptor. The Cabrera-Mott model has been successfully applied to analyze the nitridation mechanism. Plasma enhancement is mainly caused by activation of characteristic velocity of nitridation species rather than by an increase in the electric field appearing in a film. Enhancement due to fluorine incorporation is also explained with the model. Bombardment of ionic species causes sputtering and deposition resulting in damage, contamination and thickness nonuniformity. Optimizing the plasma conditions, decrease in nitridation temperature, increase in growth rate, and improvements in film composition and interfacial structure have been obtained. It has been found that the further nitridation proceeds, the lower Nss becomes. This technique offers various advantages to the VLSI dielectric process.

show abstract

Radiation effects in nitrided oxides

Cited by 131 publications

References 8 publications

An Investigation of Fixed Charge Buildup in Nitrided Oxides

An Investigation of Fixed Charge Buildup in Nitrided Oxides

Oxynitridation of silicon by remote-plasma excited nitrogen and oxygen

Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide

Contact Info

Product

Resources

About