Radiation Effect of Metal-Oxide-Semiconductor Structure Irradiated by Electron

Abstract

×MOS structure has been radiated by electron, dosage is 2×1013 cm-2 ~ 1×1014 cm-2. The interface density distributing in energy band has been tested by quasi-static method. It is found that interface density increase while electron dosage increasing. When dosage arrived to 1×1014 cm-2, interface density arrives to 1013(cm-2eV-1),which is two order of magnitude higher than without irradiation. Further more, the shapes of density increase curve are completely different.