Radiation Dose Due to Electron-Gun Metallization Systems

Mayo, S.; Galloway, K.F.; Leedy, T. F.

doi:10.1109/tns.1976.4328593

Cited by 20 publications

(6 citation statements)

References 10 publications

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“…These high energy photons can be an important source of damage to a device. 4,26,37,38 To reduce the total dose of X-ray radiation, we argue similarly as for the thermal radiation: In a first order approximation, the temperature of the evaporation material increases linearly with e-beam current for a fixed acceleration voltage. According to the Antoine equation, this can lead to an exponentially increasing deposition rate as a function of e-beam current.…”

Section: Electromagnetic Radiationmentioning

confidence: 98%

“…1,35 Another source of electromagnetic radiation during e-beam evaporation is bremsstrahlung, which is created by the impact of primary electrons onto the evaporation material. 4,36 As acceleration voltages between 4 and 20 kV are typically used in e-beam evaporators, [1][2][3] the spectral density of the bremsstrahlung has its maximum within the X-ray regime. These high energy photons can be an important source of damage to a device.…”

Section: Electromagnetic Radiationmentioning

confidence: 99%

“…[1][2][3] Especially in the field of semiconductor technology, it is well documented that radiation emitted by an e-beam evaporator can induce defects in the semiconductor material. [4][5][6][7][8] Possible side-effects of e-beam evaporation on other aspects of micro-and nanofabrication, e.g., lift-off problems of resist defined patterns, 9,10 are far less reported. Therefore, in this article we first give an overview on different types of radiation that are emitted during e-beam evaporation and how the amount of radiation depends on different deposition parameters and conditions (section II).…”

Section: Introductionmentioning

confidence: 99%

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How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Volmer,

Seidler,

Bisswanger

et al. 2020

Preprint

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We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro-and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms towards the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro-and nanostructures in an e-beam lithography process. After the metal deposition, the crosslinked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which e.g. includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber.

show abstract

Section: Electromagnetic Radiationmentioning

confidence: 98%

Section: Electromagnetic Radiationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Volmer,

Seidler,

Bisswanger

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…Another source of electromagnetic radiation during e-beam evaporation is bremsstrahlung, which is created by the impact of primary electrons onto the evaporation material [4,36]. As acceleration voltages between 4 and 20 kV are typically used in e-beam evaporators [1][2][3], the spectral density of the bremsstrahlung has its maximum within the x-ray regime.…”

Section: Electromagnetic Radiationmentioning

confidence: 99%

“…But there are also drawbacks in using e-beam deposition, which include the generation of X-rays, the emission of electrons over a large energy range, and the creation of ions by electron-impact ionization, which all can lead to problems in device fabrication [1][2][3]. Especially in the field of semiconductor technology, it is well documented that radiation emitted by an e-beam evaporator can induce defects in the semiconductor material [4][5][6][7][8]. Possible side-effects of e-beam evaporation on other aspects of micro-and nanofabrication, e.g.…”

Section: Introductionmentioning

confidence: 99%

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Volmer

Inga

Bißwanger

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms toward the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro- and nanostructures in an e-beam lithography process. After the metal deposition, the cross-linked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which e.g. includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber.

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Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal–Oxide–Semiconductor Capacitors

Fadida

Nyns

Elshocht

et al. 2016

Journal of Elec Materi

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Radiation Dose Due to Electron-Gun Metallization Systems

Cited by 20 publications

References 10 publications

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal–Oxide–Semiconductor Capacitors

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