Radiation Defects in LiNbO3 Single Crystals Doped with Cr3+ Ions

Kaczmarek, S.M.; Jabłoński, Ryszard; Świrkowicz, M.; Pracka, I.; Wojtkowska, J.; Warchoł, Stanisław

doi:10.1002/(sici)1521-4079(199906)34:5/6<729::aid-crat729>3.0.co;2-p

Cited by 7 publications

(1 citation statement)

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“…Interestingly, the LNO grating's top part in sample 6 did not exhibit lateral etching, while the mid-section of the sidewall showed lateral etching. This phenomenon raises suspicions that the top Cr mask might have diffused into the underlying LNO at elevated temperatures, leading to alloy formation [56][57][58]. The alloyed LNO layer at the top appeared less susceptible to wet etching than the middle part, resulting in the formation of the inward concavity sidewall.…”

Section: Resultsmentioning

confidence: 99%

Advanced Etching Techniques of LiNbO3 Nanodevices

Shen,

Hu,

Dai

et al. 2023

Nanomaterials

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Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant polarizations. However, challenges remain regarding their nanofabrication that hinder their applications. The prevailing etching techniques for LNO encompass dry etching, wet etching, and focused-ion-beam etching, each having distinct merits and demerits. Achieving higher etching rates and improved sidewall angles presents a challenge in LNO nanofabrication. Building upon the current etching researches, this study explores various etching methods using instruments capable of generating diverse plasma densities, such as dry etching in reactive ion etching (RIE) and inductively coupled plasma (ICP), proton exchange-enhanced etching, and wet chemical etching following high-temperature reduction treatment, as well as hybrid dry and wet etching. Ultimately, after employing RIE dry etching combined with wet etching, following a high-temperature reduction treatment, an etching rate of 10 nm/min and pretty 90° sidewall angles were achieved. Furthermore, high etching rates of 79 nm/min with steep sidewall angles of 83° were obtained using ICP dry etching. Additionally, using SiO2 masks, a high etching rate of 108 nm/min and an etching selectivity ratio of 0.86:1 were achieved. Distinct etching conditions yielded diverse yet exceptional results, providing multiple processing paths of etching for the versatile application of LNO.

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Section: Resultsmentioning

confidence: 99%