Radiation defect clusters in electron-irradiated silicon

Лугаков, П. Ф.; Filippov, I. M.

doi:10.1080/00337578508222539

Cited by 11 publications

(2 citation statements)

References 4 publications

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“…The data shown in figure 6 is representative of much more that have been reported in the literature for both junctions and bulk Si. Lugakov [29] gives lifetime damage coefficients for electrons over the range 2.5 - 1,200MeV. which show a linear dependence on NIEL. Wyatt et al [30] give both lifetime and carrier removal damage coefficients for electrons on p-and n-type Si, which are also consistent with the results shown in figure 6.…”

Section: Iiib Electrons On Gaas and Simentioning

confidence: 99%

Damage correlations in semiconductors exposed to gamma, electron and proton radiations

Summers

Burke

Shapiro

et al. 1993

IEEE Trans. Nucl. Sci.

495

250

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The use of nonionizing energy loss (NIEL) in predicting the effect of gamma, electron and proton irradiations on Si, GaAs and InP devices is discussed. The NIEL for electrons and protons has been calculated from the displacement threshold to 200 MeV. Convoluting the electron NIEL with the "slowed down" Compton secondary electron spectrum gives an effective NIEL for C o a gammas, enabling gamma-induced displacement damage to be correlated with particle results. The fluences of 1 MeV electrons equivalent to irradiation with 1 Mrad(Si) for Si. GaAs and InP are given. Analytic proton NIEL calculations and results derived from the Monte Carlo code TRIM agree exactly so long as straggling is not significant. The NIEL calculations are compared with experimental proton and electron damage coefficients using solar cells as examples. A linear relationship is found between the NIEL and proton damage coefficients for Si, GaAs and InP devices. For electrons, there appears to be a linear dependence for n-Si and n-GaAs, but for p-Si there is a quadratic relationship which decreases the damage coefficient at 1 MeV by a factor of-10 below the value for n-Si. The present results greatly extend the range of environments for which damage calculations based on NIEL can be applied. The NIEL results are presented in tabular form for ease of calculation. * The threshold energies used were 21 and 12.9 eV for Si; 10 eV for Ga and As; 6.7 eV for In and 8.7 eV for P.

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Section: Iiib Electrons On Gaas and Simentioning

confidence: 99%

Damage correlations in semiconductors exposed to gamma, electron and proton radiations

Summers

Burke

Shapiro

et al. 1993

IEEE Trans. Nucl. Sci.

495

250

View full text Add to dashboard Cite

show abstract

“…However, this method significantly increases the leakage current [18]. In contrast, there is another method to control the lifetime of minority carriers by forming defects via electron-beam or particle ion-beam irradiation [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37], and the physical and electrical characteristics of the defects have been investigated [38][39][40][41][42][43][44][45][46]. The leakage current can be reduced to less than that of a solely Au-diffused diode by generating defects via electron-beam irradiation (EI) [47].…”

Section: Introductionmentioning

confidence: 99%

Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation

Onishi,

Shirai

2023

Semicond. Sci. Technol.

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We investigated the reduction in the reverse-biased leakage current of Si ultrafast recovery diodes via a combined lifetime process involving Au diffusion and bulk electron-beam irradiation (EI). The leakage current of the combined-processed diode was significantly reduced to less than one-third of that of the diode processed solely with Au diffusion, maintaining a similar switching time of 32 ns. This reduction was not achievable with the sole use of EI. Deep-level transient spectroscopy revealed that the reduction in the leakage current was due to the coexistence of the deep trap level of Au (E c-0.51 eV) and the shallow trap level of the defects (E c-0.39 eV) generated via EI as lifetime killers. By combining the deep and shallow trap levels, the lifetime of the carriers generated in the depletion layer of the reverse-biased p-n junction becomes long and consequently, the leakage current is reduced. By maintaining the trap density ratio of defects to diffused Au above 0.28, the leakage current was reduced to less than one-third of that in the solely Au-diffused diode, while maintaining a similar switching time.

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Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals

Harutyunyan,

Sahakyan,

Manukyan

et al. 2023

J. Electron. Mater.

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Radiation defect clusters in electron-irradiated silicon

Cited by 11 publications

References 4 publications

Damage correlations in semiconductors exposed to gamma, electron and proton radiations

Damage correlations in semiconductors exposed to gamma, electron and proton radiations

Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation

Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals

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