Radiation Damages in CMOS Active Pixel Sensors

Goiffon, Vincent; Magnan, Pierre; Virmontois, Cédric; Cervantes, Paola; Corbière, Franck; Estribeau, Magali

doi:10.1364/isa.2011.ima3

Cited by 6 publications

(7 citation statements)

References 7 publications

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“…These radiation environments contain particles (e.g. electrons, neutrons, protons) which can severely degrade the performance of optical [12] and optoelectronic [13] systems such as Charged Coupled Devices (CCD) or CMOS Image Sensors (CIS) [10,[14][15][16]. In CIS, the particles can produce temporary or destructive Single Event Effects (SEE) [17], but also cumulative effects which lead to the permanent degradation of key performances of the optical detector such as the sensitivity, the dynamic range, the dark current [18,19] or also the charge transfer efficiency in Pinned PhotoDiode (PPD) CIS [20].…”

Section: Introductionmentioning

confidence: 99%

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

et al. 2016

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The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

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Section: Introductionmentioning

confidence: 99%

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

et al. 2016

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“…CMOS sensors are inherently more radiation tolerant than CCDs and so are well suited for space missions. 69 Modern CMOS sensors also allow faster frame rates than previous generation of silicon imagers. Finally, these devices are being fabricated with increasing physical areas and at higher yields for effectively lower cost.…”

Section: Sensor Technologymentioning

confidence: 99%

Approaches to lowering the cost of large space telescopes

Douglas,

Aldering,

Allan

et al. 2023

Astronomical Optics: Design, Manufacture, and Test of Space and Ground Systems IV

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New development approaches, including launch vehicles and advances in sensors, computing, and software, have lowered the cost of entry into space, and have enabled a revolution in low-cost, high-risk Small Satellite (SmallSat) missions. To bring about a similar transformation in larger space telescopes, it is necessary to reconsider the full paradigm of space observatories. Here we will review the history of space telescope development and cost drivers, and describe an example conceptual design for a low cost 6.5 m optical telescope to enable new science when operated in space at room temperature. It uses a monolithic primary mirror of borosilicate glass, drawing on lessons and tools from decades of experience with ground-based observatories and instruments, as well as flagship space missions. It takes advantage, as do large launch vehicles, of increased computing power and space-worthy commercial electronics in low-cost active predictive control systems to maintain stability. We will describe an approach that incorporates science and trade study results that address driving requirements such as integration and testing costs, reliability, spacecraft jitter, and wavefront stability in this new risk-tolerant "LargeSat" context.

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“…The radiation response of CMOS image sensors (CIS), also called Active Pixel Sensors (APS), has been widely studied as these devices are considered for use in various harsh environments like the ones associated with space [1][2][3], military applications or vision systems in nuclear industries [4].…”

Section: Introductionmentioning

confidence: 99%

“…This class of optical sensors possesses numerous advantages for their use in a radiation environment over Charge Coupled Devices (CCD), such as the absence of radiation-induced degradation of charge-transfer efficiency and an overall higher tolerance to ionizing radiations. Previous studies have revealed most of the degradation mechanisms of these CMOS devices when exposed to radiations [1][2][3]. Among the different degradation mechanisms, the following have been identified in CIS: measured uniform dark current increase, creation of hot pixels, decrease of sensitivity and of the sensor dynamic range.…”

Section: Introductionmentioning

confidence: 99%

Vulnerability of CMOS image sensors in megajoule class laser harsh environment

Goiffon¹,

Girard²,

Chabane³

et al. 2012

Opt. Express

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CMOS image sensors (CIS) are promising candidates as part of optical imagers for the plasma diagnostics devoted to the study of fusion by inertial confinement. However, the harsh radiative environment of Megajoule Class Lasers threatens the performances of these optical sensors. In this paper, the vulnerability of CIS to the transient and mixed pulsed radiation environment associated with such facilities is investigated during an experiment at the OMEGA facility at the Laboratory for Laser Energetics (LLE), Rochester, NY, USA. The transient and permanent effects of the 14 MeV neutron pulse on CIS are presented. The behavior of the tested CIS shows that active pixel sensors (APS) exhibit a better hardness to this harsh environment than a CCD. A first order extrapolation of the reported results to the higher level of radiation expected for Megajoule Class Laser facilities (Laser Megajoule in France or National Ignition Facility in the USA) shows that temporarily saturated pixels due to transient neutron-induced single event effects will be the major issue for the development of radiation-tolerant plasma diagnostic instruments whereas the permanent degradation of the CIS related to displacement damage or total ionizing dose effects could be reduced by applying well known mitigation techniques.

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Radiation Damages in CMOS Active Pixel Sensors

Cited by 6 publications

References 7 publications

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

Approaches to lowering the cost of large space telescopes

Vulnerability of CMOS image sensors in megajoule class laser harsh environment

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