Radiation damage studies on STAR250 CMOS sensor at 300keV for electron microscopy

Faruqi, A.R.; Henderson, Richard A.; Holmes, Jason

doi:10.1016/j.nima.2006.04.066

Cited by 15 publications

(9 citation statements)

References 7 publications

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“…Since the primary electrons are directly incident on the MAPS detector, the diodes and three or four transistors present on each pixel must be radiation hardened. Existing MAPS detectors such as the FillFactory STAR250 [27] show that this is possible but the MAPS detector tested here was not rad-hard.…”

Section: Introductionmentioning

confidence: 91%

Detective quantum efficiency of electron area detectors in electron microscopy

et al. 2009

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Recent progress in detector design has created the need for a careful side-by-side comparison of the modulation transfer function (MTF) and resolution-dependent detective quantum efficiency (DQE) of existing electron detectors with those of detectors based on new technology. We present MTF and DQE measurements for four types of detector: Kodak SO-163 film, TVIPS 224 charge coupled device (CCD) detector, the Medipix2 hybrid pixel detector, and an experimental direct electron monolithic active pixel sensor (MAPS) detector. Film and CCD performance was measured at 120 and 300 keV, while results are presented for the Medipix2 at 120 keV and for the MAPS detector at 300 keV. In the case of film, the effects of electron backscattering from both the holder and the plastic support have been investigated. We also show that part of the response of the emulsion in film comes from light generated in the plastic support. Computer simulations of film and the MAPS detector have been carried out and show good agreement with experiment. The agreement enables us to conclude that the DQE of a backthinned direct electron MAPS detector is likely to be equal to, or better than, that of film at 300 keV.

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Section: Introductionmentioning

confidence: 91%

Detective quantum efficiency of electron area detectors in electron microscopy

et al. 2009

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“…Radiation damage to the phosphor and its support matrix is much less severe and leads to small changes in the sensitivity that can be corrected for by refreshing the gain correction of the detector. With careful design, the radiation damage to CMOS devices can be minimized so that they can withstand many Mrads of radiation (Campbell et al 2001; Eid et al 2001; Bogaerts et al 2003; Faruqi et al 2006). This level of radiation tolerance is not sufficient for diffraction or high-dose experiments, but is sufficient to enable over one year of careful low-dose usage.…”

Section: Basic Properties Of Detectorsmentioning

confidence: 99%

“…Techniques for designing more radiation hard CMOS devices have been known for many years (Campbell et al 2001; Eid et al 2001; Bogaerts et al 2003; Battaglia et al 2009 a ). To test if these were applicable to use in an electron microscope a commercially available radiation-hardened optical MAPS imaging sensor was tested (Faruqi et al 2006). The sensor was much too small for practical use (525×525 pixels) but showed sufficient radiation hardness to clearly demonstrate the possibility of producing larger area MAPS for use in low-dose applications.…”

Section: Detectorsmentioning

confidence: 99%

Electronic detectors for electron microscopy

Faruqi

McMullan

2011

Quart. Rev. Biophys.

104

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Electron microscopy (EM) is an important tool for high-resolution structure determination in applications ranging from condensed matter to biology. Electronic detectors are now used in most applications in EM as they offer convenience and immediate feedback that is not possible with film or image plates. The earliest forms of electronic detector used routinely in transmission electron microscopy (TEM) were charge coupled devices (CCDs) and for many applications these remain perfectly adequate. There are however applications, such as the study of radiation-sensitive biological samples, where film is still used and improved detectors would be of great value. The emphasis in this review is therefore on detectors for use in such applications. Two of the most promising candidates for improved detection are: monolithic active pixel sensors (MAPS) and hybrid pixel detectors (of which Medipix2 was chosen for this study). From the studies described in this review, a back-thinned MAPS detector appears well suited to replace film in for the study of radiation-sensitive samples at 300 keV, while Medipix2 is suited to use at lower energies and especially in situations with very low count rates. The performance of a detector depends on the energy of electrons to be recorded, which in turn is dependent on the application it is being used for; results are described for a wide range of electron energies ranging from 40 to 300 keV. The basic properties of detectors are discussed in terms of their modulation transfer function (MTF) and detective quantum efficiency (DQE) as a function of spatial frequency.

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“…It was clear however, from initial tests conducted in our laboratory [2] and elsewhere [3] that several problems would need to be solved to achieve a detector that could satisfy the needs of cryo-EM. Improvements required included : considerable radiation hardening to prolong the lifetime of the detector in the microscope to reach ~ a few years in operation [4], larger sensitive areas, larger number of pixels, backthinning to <50 microns to reduce backscatter and to improve DQE at all spatial frequencies [5], faster readout for recording images in movie mode (more below) and investigating the option of electron counting mode for obtaining close to near-perfect DQE at high spatial frequencies [6]. Since biological specimens have very low contrast and the electron dose is limited due to radiation damage the images are very noisy with poor signal-to-noise ratio.…”

Section: Introductionmentioning

confidence: 99%

Direct Electron Detectors for Electron Microscopy

Faruqi¹,

Henderson²,

McMullan³

2014

Proceedings of 22nd International Workshop on Vertex Detectors — PoS(Vertex2013)

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A number of technical improvements in the design of backthinned CMOS detectors for electron cryo-microscopy are reviewed in this paper. The resulting improved performance, in terms of DQE at all spatial frequencies, has enabled structural investigations to be carried out at higher resolutions than previously possible with film or phosphor-fiber-optic-coupled CCD detectorsthis is illustrated with a few chosen examples.

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Radiation damage studies on STAR250 CMOS sensor at 300keV for electron microscopy

Cited by 15 publications

References 7 publications

Detective quantum efficiency of electron area detectors in electron microscopy

Detective quantum efficiency of electron area detectors in electron microscopy

Electronic detectors for electron microscopy

Direct Electron Detectors for Electron Microscopy

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