Radiation damage in silicon detectors

Lindström, G.

doi:10.1016/s0168-9002(03)01874-6

Cited by 198 publications

(102 citation statements)

References 42 publications

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“…The annealing properties of the samples irradiated to ∼10 15 n eq /cm 2 are quite different from those reported previously [17], especially at high bias voltages. Fig.…”

Section: Annealingcontrasting

confidence: 95%

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Hara¹,

Allport²,

Baca³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Article:Hara, K., Allport, P.P., Baca, M. et al. ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade The ATLAS group has evaluated the charge collection in silicon microstrip sensors irradiated up to a fluence of 1 × 10 16 n eq /cm 2 , exceeding the maximum of 1.6 × 10 15 n eq /cm 2 expected for the strip tracker during the high luminosity LHC (HL-LHC) period including a safety factor of 2. The ATLAS12, n þ -on-p type sensor, which is fabricated by Hamamatsu Photonics (HPK) on float zone (FZ) substrates, is the latest barrel sensor prototype. The charge collection from the irradiated 1 Â 1cm 2 barrel test sensors has been evaluated systematically using penetrating β-rays and an Alibava readout system. The data obtained at different measurement sites are compared with each other and with the results obtained from the previous ATLAS07 design. The results are very consistent, in particular, when the deposit charge is normalized by the sensor's active thickness derived from the edge transient current technique (edge-TCT) measurements. The measurements obtained using β-rays are verified to be consistent with the measurements using an electron beam. The edge-TCT is also effective for evaluating the field profiles across the depth. The differences between the irradiated ATLAS07 and ATLAS12 samples have been examined along with the differences among the samples irradiated with different radiation sources: neutrons, protons, and pions. The studies of the bulk properties of the devices show that the devices can yield a sufficiently large signal for the expected fluence range in the HL-LHC, thereby acting as precision tracking sensors.

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“…The annealing properties of the samples irradiated to ∼10 15 n eq /cm 2 are quite different from those reported previously [17], especially at high bias voltages. Fig.…”

Section: Annealingcontrasting

confidence: 95%

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Hara¹,

Allport²,

Baca³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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“…A long-term effect of radiation damage in a silicon detector is the ability of incoming particles to displace atoms from the lattice and create defects which can be stable at standard operating temperatures 1 . The most problematic defects are those which give rise to energy levels within the silicon bandgap.…”

Section: Introductionmentioning

confidence: 99%

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

et al. 2016

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Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.

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“…It is clear that the simulation can accommodate the measured trapping rate in the same region of parameter space that maximizes the leakage current. Figure 11(b) also suggests a solution to the puzzle that the trapping rates have been shown to be unaffected by the presence of oxygen in the detector bulk [19] whereas it is well-established that the space charge effects are quite sensitive to the presence of oxygen in the material [22], [23]. It is clear from Fig 11(b) that small-cross-section trapping states can play a large role in the effective charge density but a small one in the effective trapping rates: every point on the BF line produces 100% of the effective charge density but only the larger cross section points contribute substantially to the trapping rate.…”

Section: An Improved Two-trap Modelmentioning

confidence: 91%

Simulation of heavily irradiated silicon pixel sensors and comparison with test beam measurements

Chiochia

Swartz²,

Bortoletto³

et al. 2005

IEEE Trans. Nucl. Sci.

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Abstract-Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes free carrier trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant typeinverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a double peak electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

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Radiation damage in silicon detectors

Cited by 198 publications

References 42 publications

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

Simulation of heavily irradiated silicon pixel sensors and comparison with test beam measurements

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