Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics

Hazdra, P.; Popelka, Stanislav; Záhlava, V.; Vobecký, J.

doi:10.4028/www.scientific.net/ssp.242.421

Cited by 15 publications

(12 citation statements)

References 13 publications

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“…In this section, we summarise the main mechanisms caused by radiation which degrade electrical parameters of irradiated SiC material and structures. This summary is supported by experimental data presented in our prior works [25, 38].…”

Section: Resultssupporting

confidence: 87%

“…Different power devices were used in the experiment: JBS diodes C2D05120A (5 A/1.2 kV) and CPW31700S010B (10 A/1.7 kV), power MOSFET C2M1000170D (5 A/1.7 kV) all from Wolfspeed, Inc., 4 A/1.7 kV normally off vertical trench JFET SJEP170R550 from former SemiSouth [25] and the power 4.5 kV PiN diode chips. The schematic cross-section of all investigated SiC power devices is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Free carrier (electron) profiles measured by C-V profiling in the 4H-SiC epitaxial layer irradiated with different fluences of 1.9 MeV alphas (T = 300 K) Decrease of the free carrier (electron) concentration in the nepilayer of different SiC devices with increasing fluence of neutron (solid) and electron (dashed) irradiation (obtained from room temperature C-V measurement[25,38]) Effect 4.5 MeV electron irradiation on the forward I-V characteristics of the 1.7 kV 4H-SiC JBS diode (C3D10170H) (room temperature measurement) IET Power Electron., 2019, Vol. 12 Iss.…”

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confidence: 99%

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Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Hazdra

Popelka

2019

IET Power Electronics

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A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal-oxide-semiconductor field-effect transistors. According to the authors' study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Hazdra

Popelka

2019

IET Power Electronics

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“…The effect of parasitic turn-on on a half-bridge with 1700V N-ON SiC JFET-containing 32 pairs of chips in parallel were tested by [63], while the effect of ion, electron and neutron radiation on the electrical properties and thermal stability of 1700 n-type 4H-SiC epilayer used in fabricating devices such JFETs were examined by [64]. The effect on device properties were analyzed by capacitance deep level transient spectroscopy (DLTS), V-I curve and C-V profiling.…”

Section: G Miscellaneous Application Of Sic Jfetmentioning

confidence: 99%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

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Abstract-properties of Silicon Carbide Junction Field EffectTransistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

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“…Power Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) play a significant role in space, power plant, military and harsh environment applications [1], [2]. Semiconductor devices present in radiation harsh environment would be exposed to different types of radiations which lead to malfunctions of the devices [3]. The space radiation environment is mainly classified into particle and proton radiation.…”

Section: Introductionmentioning

confidence: 99%

Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

Kannan

Krishnamurthy

Kiong

et al. 2019

IJECE

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Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

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Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics

Cited by 15 publications

References 13 publications

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

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