Radiation damage effects on zinc oxide (ZnO) based semiconductor devices– a review

Rasmidi, Rosfayanti; Duinong, Mivolil; Chee, Fuei Pien

doi:10.1016/j.radphyschem.2021.109455

Cited by 38 publications

(20 citation statements)

References 56 publications

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“…The application of high-energy irradiation is promising as it can change the physicochemical properties of the sensing materials. When high-energy beams interact with the sensing material, they can modify the molecular and structural properties of the materials, including the ionization and development of various types of defects such as interstitial atoms and vacancies [ 124 ]. In this manner, irradiation modifies the structure of the sensing material and may therefore alter its detection capability.…”

Section: Irradiated Gas Sensorsmentioning

confidence: 99%

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

Navale

Mirzaei

Majhi

et al. 2021

Sensors

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This review presents the results of cutting-edge research on chemiresistive gas sensors in Korea with a focus on the research activities of the laboratories of Professors Sang Sub Kim and Hyoun Woo Kim. The advances in the synthesis techniques and various strategies to enhance the gas-sensing performances of metal-oxide-, sulfide-, and polymer-based nanomaterials are described. In particular, the gas-sensing characteristics of different types of sensors reported in recent years, including core–shell, self-heated, irradiated, flexible, Si-based, glass, and metal–organic framework sensors, have been reviewed. The most crucial achievements include the optimization of shell thickness in core–shell gas sensors, decrease in applied voltage in self-heated gas sensors to less than 5 V, optimization of irradiation dose to achieve the highest response to gases, and the design of selective and highly flexible gas sensors-based WS2 nanosheets. The underlying sensing mechanisms are discussed in detail. In summary, this review provides an overview of the chemiresistive gas-sensing research activities led by the corresponding authors of this manuscript.

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Section: Irradiated Gas Sensorsmentioning

confidence: 99%

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

Navale

Mirzaei

Majhi

et al. 2021

Sensors

View full text Add to dashboard Cite

show abstract

“…Among metal oxide-based semiconductor, ZnO based semiconductor shows promising result due to its broad application. Belonging in the II-VI semiconductor group, ZnO is known for its direct, wide bandgap ranging within 3.1 to 3.37 eV, has high excitation binding energy of 60 meV, with a hexagonal wurtzite crystal structure [4,5]. Outside the Earth's exosphere, flexible space borne electronics are vulnerable to various types of cosmic radiation.…”

Section: Introductionmentioning

confidence: 99%

“…However, despite the apparent damage caused by radiation exposure, a number of past studies concluded that metal oxide-based semiconductors show greater radiation threshold than conventional semiconductors, thus highlighting the importance and necessity in replacing current conventional semiconductors [5]. Recently, the effect of gamma radiation on the electrical performance of a heterojunction pairing of ZnO/CuGaO 2 [7] has been studied and shows varying electrical performance with increasing irradiation while still retaining its semiconductor properties and functionality, despite high radiation exposure [7].…”

Section: Introductionmentioning

confidence: 99%

Effect of Gamma Radiation on Structural and Optical Properties of ZnO and Mg-Doped ZnO Films Paired with Monte Carlo Simulation

et al. 2022

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In space, geostationary electronics located within the outer van Allen radiation belt are vulnerable to gamma radiation exposure. In terms of application, implementing an electronic system in a high radiation environment is impossible via conventional engineering materials such as metal alloys as they are prone to radiation damage. Exposure to such radiation causes degradation and structural defects within the semiconductor component, significantly changing their overall density. The changes in the density will then cause electronic failure, known as the single event phenomena. Thus, the radiation response of material must be thoroughly investigated before the material is applied in a harsh radiation environment, specifically for flexible space borne electronic application. In this work, potential candidates for space-borne application devices: zinc oxide (ZnO) and Mg-doped ZnO thin film with a film thickness of 300 nm, were deposited onto an indium tin oxide (ITO) substrate via radio frequency (RF) sputtering method. The fabricated films were then irradiated by Co-60 gamma ray at a dose rate of 2 kGy/hr. The total ionizing dose (TID) effect of ZnO and Mg-doped ZnO thin films were then studied. From the results obtained, degradation towards the surface morphology, optical properties, and lattice parameters caused by increasing TID, ranging from 10 kGy–300 kGy, were evaluated. The alteration can be observed on the morphological changes due to the change in the roughness root mean square (RMS) with TID, while structural changes show increased strain and decreased crystallite size. For the optical properties, band gap tends to decrease with increased dose in response to colour centre (Farbe centre) effects resulting in a decrease in transmittance spectra of the fabricated films.

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“…Zinc oxide (ZnO) is a wide band-gap (E g = 3.37 eV) semiconductor, which has a wide range of technological applications, making it an extremely popular research topic in recent years [1][2][3][4][5][6][7]. The crystal lattice of the most common ZnO phase belongs to the wurtzite type and is strongly anisotropic [8][9][10], giving origin to its piezoelectric and pyroelectric properties [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Study of High-Temperature Behaviour of ZnO by Ab Initio Molecular Dynamics Simulations and X-ray Absorption Spectroscopy

et al. 2021

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Wurtzite-type zinc oxide (w-ZnO) is a widely used material with a pronounced structural anisotropy along the c axis, which affects its lattice dynamics and represents a difficulty for its accurate description using classical models of interatomic interactions. In this study, ab initio molecular dynamics (AIMD) was employed to simulate a bulk w-ZnO phase in the NpT ensemble in the high-temperature range from 300 K to 1200 K. The results of the simulations were validated by comparison with the experimental Zn K-edge extended X-ray absorption fine structure (EXAFS) spectra and known diffraction data. AIMD NpT simulations reproduced well the thermal expansion of the lattice, and the pronounced anharmonicity of Zn–O bonding was observed above 600 K. The values of mean-square relative displacements and mean-square displacements for Zn–O and Zn–Zn atom pairs were obtained as a function of interatomic distance and temperature. They were used to calculate the characteristic Einstein temperatures. The temperature dependences of the O–Zn–O and Zn–O–Zn bond angle distributions were also determined.

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Radiation damage effects on zinc oxide (ZnO) based semiconductor devices– a review

Cited by 38 publications

References 56 publications

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

Effect of Gamma Radiation on Structural and Optical Properties of ZnO and Mg-Doped ZnO Films Paired with Monte Carlo Simulation

Study of High-Temperature Behaviour of ZnO by Ab Initio Molecular Dynamics Simulations and X-ray Absorption Spectroscopy

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