Radiation damage effects on double-SOI pixel sensors for X-ray astronomy

Hagino, K.; Yarita, Keigo; Negishi, Kousuke; Oono, Kenji; Hayashida, Mitsuki; Kitajima, Masatoshi; Kohmura, Takayoshi; Tsuru, Takeshi Go; Tanaka, Takaaki; Uchida, Hiroyuki; Kayama, Kazuho; Amano, Yoshiharu; Kodama, Ryota; Takeda, Ayaki; Mori, Koji; Nishioka, Yusuke; Yukumoto, Masataka; Hida, Takahiro; Arai, Y.; Kurachi, Ikuo; Hamano, Tsuyoshi; Kitamura, Hisashi

doi:10.1016/j.nima.2020.164435

Cited by 10 publications

(8 citation statements)

References 11 publications

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“…This increased parasitic capacitance is quantitatively consistent with that expected from the observed gain decrease of the DSOI XRPIX. 10 According to the previous study on the DSOI XRPIX, 10 the inverse of the gain G changes with the parasitic capacitance of the sense node C SN as…”

Section: Gainmentioning

confidence: 98%

“…For a comparison under the same condition, data from PDD XRPIX are plotted only below 6.5 krad, which is the maximum total dose of the proton irradiation experiment of DSOI XRPIX. 10 Both results of PDD and DSOI are fitted with linear functions in this dose range. According to the fitting, after the 4-krad irradiation, the energy resolution of the DSOI device is degraded by 7.0 ± 2.5 %, whereas that of the PDD device remains constant within 1%.…”

Section: Comparison With Dsoimentioning

confidence: 99%

“…Among them, DDD and TID effects are known to degrade the spectral performance of X-ray sensors. [8][9][10][11][12] For example, in X-ray charge-coupled devices (CCDs), the lattice defects caused by the DDD effect result in the loss of some of the charges during transfer, which consequently degrades the energy resolution. In fact, in-orbit proton bombardment gradually deteriorated the energy resolution of X-ray CCDs onboard the Suzaku satellite.…”

Section: Introductionmentioning

confidence: 99%

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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Hayashida,

Hagino,

Kohmura

et al. 2021

Preprint

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X-ray silicon-on-insulator (SOI) pixel sensors, "XRPIX," are being developed for the next-generation Xray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anticoincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the National Institute of Radiological Sciences. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 ± 3%, yielding an energy resolution of 260.1 ± 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.

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Section: Gainmentioning

confidence: 98%

Section: Comparison With Dsoimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Hayashida,

Hagino,

Kohmura

et al. 2021

Preprint

Self Cite

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“…These two layers are separated by a buried oxide layer, which enables thin substrate thicknesses and small pitches with low capacitance [9]. However, these devices suffer from high sensitivity to radiation mainly due to the accumulation of positive oxide charges in the buried oxide layer [10].…”

Section: Introductionmentioning

confidence: 99%

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

et al. 2021

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Fully depleted monolithic active pixel sensors (FD-MAPSs) represent a state-of-the-art detector technology and profit from a low material budget and cost for high-energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall to the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article, we describe the optimization of the test pixel designs that will be implemented in the first engineering run of the demonstrator chip of the ARCADIA project. These optimization procedures include radiation damage models that have been employed in Technology Computer Aided Design simulations to predict the sensors’ behavior in different working environments.

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“…SOI sensors embed a buried-oxide layer separating a thin low-resistivity silicon layer, which hosts the integrated readout circuitry, from a thicker high-resistivity substrate, which serves as the sensitive detection region [ 16 , 17 ]. This technology allows a low capacitance to be obtained [ 17 ]; however, SOI sensors suffer from back-gate effect and have a reduced radiation hardness, due to accumulation of positive holes charges in the buried oxide layer after irradiation [ 18 ]. Strategies have been found to overcome these limitations and to recover from the Total Ionizing Dose (TID) [ 19 ], but, as a consequence, the fabrication process of SOI sensors have become highly specialized and not compliant with standard microelectronics production processes.…”

Section: Introductionmentioning

confidence: 99%

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept

Cilladi

Corradino

Betta

et al. 2021

Sensors

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The paper presents the simulation studies of 10 μμμm pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A set of Technology Computer-Aided Design (TCAD) parametric simulations was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics, and optimizing the sensor layout for enhanced performance in terms of low capacitance, fast charge collection, and low-power operation. A fine pitch of 10 μμμm was chosen to provide high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionizing doses of the order of 10 to 105 krad were also modeled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available from mid-2021.

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Radiation damage effects on double-SOI pixel sensors for X-ray astronomy

Cited by 10 publications

References 11 publications

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept

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