Radiation Damage Effects in Alumina

Pells, G.P.

doi:10.1111/j.1151-2916.1994.tb07004.x

Cited by 79 publications

(30 citation statements)

References 60 publications

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“…The 0.01 dpa data suggest that a dominant defect annealing stage occurs near 600°C. Previous optical spectroscopy studies on sapphire irradiated under similar conditions as the present study [42,[54][55][56] have observed several distinct annealing stages in the temperature range from 100 to 800°C, which are associated with the formation or dissociation of different types of small defects. For example, annealing of oxygen monovacancies occurs in a broad temperature range extending from $100°C (i.e., immediately above the irradiation temperature) up to $700°C, and oxygen divacancy annealing stages (F 2 , F þ 2 , etc.)…”

Section: Isochronal Annealing Of Thermal Resistancementioning

confidence: 75%

Thermal conductivity degradation of ceramic materials due to low temperature, low dose neutron irradiation

Snead

Zinkle

White

2005

Journal of Nuclear Materials

141

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Section: Isochronal Annealing Of Thermal Resistancementioning

confidence: 75%

Thermal conductivity degradation of ceramic materials due to low temperature, low dose neutron irradiation

Snead

Zinkle

White

2005

Journal of Nuclear Materials

141

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“…Averback et al found a decrease in damage efficiency with increasing ion mass for a variety of irradiations [24]. Pells concluded that the reduction in damage efficiency is the result of Frenkel pair combination within a displacement cascade [25]. The mass of irradiation ion (Zr) and the fluences used in the present study are higher than those used in these earlier studies, and a decrease on damage efficiency (number of retained defects) is expected.…”

Section: Methodsmentioning

confidence: 77%

The defect structure of sapphire produced by implantation of Zr and Zr plus O: threshold fluence for amorphization and optical properties

Sina

Townsend

McHargue

et al. 2012

Phys. Status Solidi C

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Zirconium implantation‐induced amorphization has been investigated with Rutherford back scattering spectrometry along a channeling direction (RBS‐C) using 2 MeV He+. Ion implantation was carried out at the energy of 175 keV, with fluences of 2×1015 to 2×1016 Zr+/cm2 at room temperatures. The critical amorphization fluence at room temperature was determined as ∼1.5×1016 Zr+/cm2 corresponding to ∼ 40 dpa; ∼2.7% peak Zr‐concentration) which is a lower damage energy than that reported for implantation with ions of similar mass and energy. The effect of post implantation of oxygen into a pre‐implanted sample (with zirconium) was investigated. The RBS results show that oxygen implantation in a crystalline sample increases the damage only slightly and slightly broadens the Zr profile. For the fluences above thresh‐old for amorphization, post implantation by oxygen has very little effect on the residual damage or on the Zr distribution. The presence of both F and F+ centers were indicated by optical absorption (OA) measurements. The OA spectra show the concentration of F and F+ centers increases with increasing fluence with some changes resulting from oxygen implantation of a pre‐zirconium‐implanted sapphire. This alters the relative concentrations of F and F+ centers. The F‐type center concentrations for the samples were calculated using Smakula's equation. Photoluminescence (PL) at an excitation of 255 nm confirms the presence of both F and F+ centers with emission peaks at about 420 and 325 nm respectively. The PL spectra suggest that oxygen implantation decrease the concentration of the both species, consistent with the OA results (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…As shown in Fig. 9 thermally activated vacancy diffusion in alumina requires temperatures greater than -300-400°C [72,159].…”

Section: Microstructural Evolution In Ceramicsmentioning

confidence: 99%

Fundamental radiation effects parameters in metals and ceramics

Zinkle

1999

Radiation Effects and Defects in Solids

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Several fundamental aspects of defect cluster accumulation in irradiated ceramics and face centered cubic metals are rehewed, with particular emphasis on radiation hardening and the microstructural evolution in Cu observed by transmission electron microscopy (TEM). At temperatures where interstitials are mobile (> 50 K i n Cu), the defect cluster density in pure Cu is initially proportional to the dose and exhibits a square root dose dependence above -displacements per atom. This fluence dependence (determined from electrical resistivity and TEM studies) helps to resolve a long-standing controversy on the fluence dependence of radiation hardening. The fraction of freely migrating interstitials in copper irradiated with 14MeV neutrons at room temperature I S -11%. The activation energy for annealing stage V (stacking fault tetrahedra evaporation) in neutron-irradiated copper has been measured to be 0.84eV. Some features of the point defect accumulation behavior in ceramics are found to be very similar to the trends observed in pure Cu, despite the obvious differences in the physical properties of these two types of materials. Finally, microstructural evidence for some processes unique to nonmetals are summarized, particularly ionization induced diffusion.

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Radiation Damage Effects in Alumina

Cited by 79 publications

References 60 publications

Thermal conductivity degradation of ceramic materials due to low temperature, low dose neutron irradiation

Thermal conductivity degradation of ceramic materials due to low temperature, low dose neutron irradiation

The defect structure of sapphire produced by implantation of Zr and Zr plus O: threshold fluence for amorphization and optical properties

Fundamental radiation effects parameters in metals and ceramics

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