Radiation Damage and Structural Lattice Defects

The study of defects in type-IV semiconductors by Mössbauer spectroscopy

“…One observes the continuous growth of a resonance line at -0.20 ± 0.05 mm/s Fig. 13. -Spectra of 133Xe implanted in diamond : a-d dose dependence of the amorphization ; e hot implant ; f thermal annealing after implantation.…”

“…These experiments are especially interesting when performed as a function of temperature. Some of the most beautiful applications of the trapping method, which also constitute a most valuable contribution of Môssbauer spectroscopy to the study of radiation damage, can be found in the experiments of Mansel and Vogl [12][13][14][15]. Dilute AICo57 and AgCo57 alloys were irradiated at liquid hélium temperature with fast neutrons or electrons.…”