Radiation Damage Analysis of Individual Subcells for GaInP/GaAs/Ge Solar Cells Using Photoluminescence Measurements

Zheng, Yong Nan; Yi, Tian-Cheng; Wang, Junling; Xiao, Pengfei; Wang, Rong

doi:10.1088/0256-307x/34/2/026101

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…In Figure 9 the PL spectra of the InGaAs junction, in BOL, electron-irradiation and proton-irradiation EOL, along with the related Gaussian deconvolutions are shown. In this case, the emission intensity of EOL samples is 500 times lower than that of BOL sample, in agreement with the literature [36]: this confirms the very higher sensitivity to irradiation of the InGaAs junction with respect to the InGaP one.…”

Section: Results: Photoluminescence Spectrasupporting

confidence: 92%

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

et al. 2019

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The most common multi-junction solar cell arrangement employs the InGaP/InGaAs/Ge configuration, which is usually exploited for high-efficiency space applications. We here test the reliability of a triple-junction device with an innovative low-thickness and flexible configuration: this is investigation is aimed at providing its main macroscopic features which must be taken into account for their applications. Notably, the specific optical and electrical features and the performance variation of these thin solar cells are systematically analyzed, both in begin-of-life (BOL) configuration and after irradiation (end-of-life, EOL) by either electrons or protons. Measurements of I -V curves, with correlated parameters, and of spectral responses (external quantum efficiency) are accomplished on several BOL and EOL samples: this allows to describe the inhomogeneous damage of the subjunctions and to follow the evolution of the solar cell physical quantities as a function of the kind and the amount of irradiation. Finally, photoluminescence emission spectra are measured, pointing out the effect of particle bombardment on luminescent features. Our results show that these innovative solar devices allow for the combination of high specific power, mechanical flexibility, high performance, and strong resistance to particle irradiation, making them an excellent option for space applications.

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Section: Results: Photoluminescence Spectrasupporting

confidence: 92%

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

et al. 2019

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“…[1][2][3] With the development of laser processing technology, the use of lasers for punching, slotting and scribing germanium has also become a reality. [4][5][6][7][8] Compared with millisecond lasers, short-pulse lasers such as femtosecond and picosecond lasers have superior processing quality. However, the laser energy is easily shielded due to the plasma produced by the high power density, thus reducing the efficiency of the process.…”

Section: Introductionmentioning

confidence: 99%

Thermal stress damage mechanism in single-crystal germanium caused by 1080 nm laser irradiation

Sha

Jia

et al. 2023

Chinese Phys. B

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The thermal stress damage process of 1080 nm laser ablation of single crystal germanium was recorded in real time using a high-speed CCD. A three-dimensional finite element numerical model based on Fourier's heat conduction equation, Hooke's law and Alexander Hasson equation was developed to analyze the thermal stress damage mechanism involved. The damage morphology of the ablated samples was observed using an optical microscope. The results show that the cooling process has an important influence on the fracture in the laser irradiated region of single crystal germanium. The fracture is the result of a combination of thermal stress and local yield strength reduction.

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“…We have investigated the electron damage effects on the minority carrier lifetime in GaInP/GaAs/Ge 3J solar cells, and the values of the lifetime damage coefficient of the recombination centers have been obtained. [4] For electron irradiated GaInP/GaAs/Ge 3J solar cells, the degradation of performance is mainly dominated by the GaInP top cell and the GaAs middle cell, and the Ge bottom cell has negligible effects on the triple-junction solar cells performance. [5] To further evaluate the degradation behavior of the 3J solar cells, it is essential to investigate the electron damage of minority carrier diffusion length in the GaInP top cell and the GaAs middle cell.…”

mentioning

confidence: 99%

Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

Wu¹,

Wang²,

Yan³

et al. 2018

Chinese Phys. Lett.

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Photoluminescence (PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5MeV electrons with fluences ranging up to 3 × 1015, 1 × 1015 and 3 × 1014 cm−2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss (NIEL), which shows a quadratic dependence between damage coefficient and NIEL.

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Radiation Damage Analysis of Individual Subcells for GaInP/GaAs/Ge Solar Cells Using Photoluminescence Measurements

Cited by 6 publications

References 12 publications

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

Thermal stress damage mechanism in single-crystal germanium caused by 1080 nm laser irradiation

Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

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