1994
DOI: 10.1016/0022-3093(94)90700-5
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Radiation color center formation in silica glasses: a review of photo- and thermo-chemical aspects of the problem

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Cited by 27 publications
(17 citation statements)
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“…cursors to the H(I) center [2] and possibly those to the center, which may be responsible for the 5.4-eV absorption observed in the RIA spectra in this work (Fig. 4).…”
Section: Ku-1 Ks-4vmentioning
confidence: 82%
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“…cursors to the H(I) center [2] and possibly those to the center, which may be responsible for the 5.4-eV absorption observed in the RIA spectra in this work (Fig. 4).…”
Section: Ku-1 Ks-4vmentioning
confidence: 82%
“…(with absorption peaks near 5.4 eV), H(I) center [2] = -H (4) (maximum near 5.28 eV), and ODC-type defects (twofold-coordinated silicon and an oxygen vacancy) with a maximum near 5 eV (bands B 2 α , centered at 5.02 − 5.06 eV with FWHM = 0.35-0.38 eV, and B 2 β , centered at 5.15-5.16 eV with FWHM = 0.48 eV [17]). The 3.8-eV absorption is attributable to peroxy bonds and chlorine molecules [16].…”
Section: Ku-1 Ks-4vmentioning
confidence: 99%
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“…Color centers might be generated either by an electron missing from a normally occupied position, leading to a Bhole color-center,^or by the presence of one extra electron, which leads to an Belectron color-center.^They absorb in the visible region of the spectrum and are widely described in irradiated glasses (18,22). When the sample is heated, electrons and holes trapped into the defects recombine and the color disappears.…”
Section: Color Modificationmentioning
confidence: 99%