Radial ballistic-diffusive heat conduction in nanoscale

Han-ling, LI; Cao, Bing‐Yang

doi:10.1080/15567265.2018.1520763

Cited by 16 publications

(10 citation statements)

References 51 publications

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“…Hence, in the ballistic-diffusive regime, both the phonon boundary scattering and the phonon-phonon intrinsic scattering play an important role on the heat transfer. Furthermore, for the concentric ring geometry, previous studies [36,37] have proven that even for a given system size and temperature (T 0 , ∆ → 0), the local radial thermal conductivity is dependent of the radius in the ballistic-diffusive regime, i.e., k = k(r).…”

Section: Resultsmentioning

confidence: 98%

“…Previous work [37] based on phonon gray model shows that the radial heat transport is dominated by two parameters including the radius ratio of the two concentric boundaries (R i /R o ) and the ratio of the phonon mean free path to the characteristic length. Hence, the thermal rectification in the ballistic-diffusive regime with different characteristic length L, temperature range (T 0 , ∆) and R i /R o are investigated.…”

Section: Resultsmentioning

confidence: 99%

“…To ensure the numerical accuracy, 30164 × 1152 × 40 cells are used to discrete the physical space, solid angle space and frequency space, respectively. In addition, the isothermal thermalizing boundary conditions [37] are implemented on the inner and outer boundaries.…”

Section: Structure and Phonon Btementioning

confidence: 99%

“…In this study, the radial thermal rectification in the homogeneous concentric silicon ring from ballistic to diffusive regime is investigated, which is motivated by the nonuniform radial thermal conductivity [36,37] and radial thermal rectification in graphene [38] and helium II [39]. The paper is organized as follows.…”

Section: Introductionmentioning

confidence: 99%

“…(b)The distributions of the thermal rectification ratio with different temperature T 0 (300K, 200K) and characteristic length L = Ro − R i , where |∆| = 1.0, R i /Ro = 0.2. (a) Schematic of the distributions of the effective thermal conductivity k with different characteristic length L for a given temperature T in silicon[37,40,46]. (b) A schematic of how to realize the thermal rectification in the ballistic-diffusive regime.…”

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confidence: 99%

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Radial thermal rectification in concentric silicon ring from ballistic to diffusive regime

Zhang

Guo

Chen

2020

International Journal of Heat and Mass Transfer

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The radial thermal rectification in the concentric silicon ring from ballistic to diffusive regime is investigated based on the phonon Boltzmann transport equation. In the ballistic and diffusive limits, the analytical solutions prove that there is no thermal rectification. In the ballistic-diffusive regime, the heat flux prefers to flow from the inner boundary to the outer boundary. Furthermore, as the characteristic length (the distance between two circular boundaries) increases from tens of nanometers to tens of microns, the thermal rectification ratio enhances first and then fades away gradually. It attributes to that as the direction of the temperature gradient changes, the average phonon mean free path changes. The difference of the average phonon mean free path finally leads to the change of the heat flux or thermal conductivity. As the temperature decreases, the maximum thermal rectification ratio decreases. In addition, as the radius ratio between the inner and outer boundary increases, the thermal rectification ratio decreases for a given characteristic length.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Structure and Phonon Btementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Radial thermal rectification in concentric silicon ring from ballistic to diffusive regime

Zhang

Guo

Chen

2020

International Journal of Heat and Mass Transfer

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Direct Measurements of Anisotropic Thermal Transport in γ‐InSe Nanolayers via Cross‐Sectional Scanning Thermal Microscopy

Gonzalez‐Munoz

Agarwal

Castanon

et al. 2023

Adv Materials Inter

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Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat transport in vdW‐based nanolayers, a major challenge for nanostructured materials and devices. In the present study, a novel effective method of cross‐sectional scanning thermal microscopy was used to map and quantify the anisotropic heat transport in nanoscale thick layers of vdW materials and the material‐substrate interfaces. This technique measures the heat conducted into a vdW crystal via the nanoscale apex of a heat‐sensitive probe. The crystal is nano‐polished via Ar ion beams generating an oblique nearly atomically flat surface. By measuring the thermal conductance variation as a function of increasing layer thickness, the transition between the cross‐plane and in‐plane heat transport (defined by heat conductivity anisotropy) is acquired. By using an analytical model validated by finite element simulations, anisotropic thermal transport in a gamma indium selenide crystal nano‐thin flake on a Si substrate was studied, obtaining results corresponding to anomalously low anisotropic thermal conductivities of kxy = 2.16 Wm−1 K−1 in‐plane and kz = 0.89 Wm−1 K−1 cross‐plane confirming its potential for thermoelectric applications.

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General Aspects of Thermodynamical Modeling

Józsa

Kovács

2019

Power Systems

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Radial ballistic-diffusive heat conduction in nanoscale

Cited by 16 publications

References 51 publications

Radial thermal rectification in concentric silicon ring from ballistic to diffusive regime

Radial thermal rectification in concentric silicon ring from ballistic to diffusive regime

Direct Measurements of Anisotropic Thermal Transport in γ‐InSe Nanolayers via Cross‐Sectional Scanning Thermal Microscopy

General Aspects of Thermodynamical Modeling

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