Rabi oscillations and resonance fluorescence from a single hexagonal boron nitride quantum emitter

Konthasinghe, Kumarasiri; Chakraborty, Chitraleema; Mathur, Nikhil; Qiu, Liangyu; Mukherjee, Arunabh; Fuchs, Gregory D.; Vamivakas, A. Nick

doi:10.1364/optica.6.000542

Cited by 76 publications

(72 citation statements)

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“…Recently, hexagonal boron nitride (hBN) has been shown to host a range of sub‐band gap defects operating as room temperature SPEs. [ 5 ] These SPEs display a number of desirable properties, including high photon purity, [ 6 ] bright emission, [ 7 ] and favorable quantum efficiencies. [ 8 ] However, the emitters have been shown to be susceptible to environmental influences, which lead to extreme inhomogeneity in their emission properties, [ 9 ] including a broad, continuous spectral range of zero phonon lines spanning from the deep ultraviolet to the near infrared.…”

Section: Figurementioning

confidence: 99%

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

et al. 2020

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favorable quantum efficiencies. [8] However, the emitters have been shown to be susceptible to environmental influences, which lead to extreme inhomogeneity in their emission properties, [9] including a broad, continuous spectral range of zero phonon lines spanning from the deep ultraviolet to the near infrared. [10] Consequently, reliable tuning methods for controlling the emission properties are paramount for their implementation in quantum photonic applications.Initial reports on tuning of hBN emitters employed voltage-controlled Stark shift devices and hydrostatic pressure. [11] Strainbased tuning of hBN defects has also been investigated using either the application of surface acoustic waves [12] or mechanical deflection of solid beams that translated vertical displacements to primarily horizontal strain tensors. [13] However, contribution from both vertical and horizontal strain components in previous studies has precluded direct analysis of the in-plane response to strain, which is especially critical for 2D materials. In this work, we employ high degrees of tensile strain to tune the emission of hBN SPEs and achieve record tuning magnitudes for a layered material of up to 20 nm (65 meV). Unlike all previous reports, we take advantage of large-area (approximately few square millimeters) ultrathin hBN films (≈10 nm) that host a variety of SPEs. [14] These samples are amenable to the direct application of tensile strain (as is detailed below), and we report both red and blue spectral shifts, relating our results to modifications of the defect energy level manifold and corresponding coupling to the bulk phonon bath. We demonstrate a rotation of the optical dipole in select SPEs, suggesting the presence of a second excited state. A theoretical model to describe strain tuning the emission frequency of SPEs in hBN is fully derived and further expanded to suggest that dipole rotation occurs via the influence of this additional energy level. The ability to tune emission frequency and additional photophysical characteristics of emitters offers a promising route to tailor lightmatter interactions in these systems. [15] Strain experiments were performed on hBN films grown by chemical vapor deposition (CVD) on a copper foil to a thickness of ≈7 nm. [14a] Additional characterization and properties of the hBN films can be found elsewhere. [14a] The films were transferred from the copper foil using a polymer-assisted (poly(methyl methacrylate) (PMMA) wet-transfer process to a poly(dimethylsiloxane) (PDMS) slab of 2.7 cm in length and ≈200 µm thick (cf. Experimental Section). The hBN/PDMS slab was secured in a mechanical straining device and mounted for optical characterization via confocal microscopy, as shown in Figure 1a. The PDMS slab was subject to varying degrees of Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, tensile strain is app...

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Section: Figurementioning

confidence: 99%

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

et al. 2020

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“…The ZPL and charge transition threshold energies are consistent with calculated values for the boron vacancy. 26,37,42 These results are of practical use for enhancing the PL yields in both future devices and experimental studies, particularly under resonant excitation 45 and can play an important role in the identification of color centers in hBN.…”

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confidence: 94%

Phonon sidebands of color centers in hexagonal boron nitride

2019

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We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2eV. Resonant, or quasi-resonant excitation also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Photoluminescence excitation spectroscopy reveals a defect dependent energy threshold for repumping the color center into the bright state of between 2.2 and 2.6eV. Photoionization and photocharging of the defect is the most plausible explanation for this behaviour, with the negative and neutral charge states of the boron vacancy potential candidates for the bright and dark states,

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“…In [134] resonant excitation measurements also confirmed SPEs in h-BN with strong spectral diffusion corresponding to a linewidth broadening of 0.6 GHz and a time scale of 30 ms in the weak power limit. In the limit of high power excitation, g (2) (0) measurements revealed coherent optical Rabi oscillations.…”

Section: Spectral Study and Control Of Spssmentioning

confidence: 68%

“…In such a measurement scheme (PLE spectroscopy), the coherent population cycling between the ground and the excited states of SPE provokes an oscillation structure in the secondorder correlation function g (2) (τ) governed by the characteristic frequency, i.e., Rabi frequency, since the oscillation is imprinted into the phonon-assisted fluorescence [134]. The Rabi frequency (Ω) is proportional to the electric field amplitude associated with the excitation laser power and the g (2) (τ) function changes according the Rabi frequency (Figure 5a).…”

Section: Spectral Study and Control Of Spssmentioning

confidence: 99%

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

Castelletto

Inam

Sato

et al. 2020

Beilstein J. Nanotechnol.

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Single-photon sources and their optical spin readout are at the core of applications in quantum communication, quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide) with proven single-photon emission from the visible to infrared, a quantum spin–photon interface, and ancilla qubits, it is expected that other material platforms could emerge with similar characteristics in the near future. These two materials also naturally lead to monolithic integrated photonics as both are good photonic materials. While so far the verification of single-photon sources was based on discovery, assignment and then assessment and control of their quantum properties for applications, a better approach could be to identify applications and then search for the material that could address the requirements of the application in terms of quantum properties of the defects. This approach is quite difficult as it is based mostly on the reliability of modeling and predicting of color center properties in various materials, and their experimental verification is challenging. In this paper, we review some recent advances in an emerging material, low-dimensional (2D, 1D, 0D) hexagonal boron nitride (h-BN), which could lead to establishing such a platform. We highlight the recent achievements of the specific material for the expected applications in quantum technologies, indicating complementary outstanding properties compared to the other 3D bulk materials.

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Rabi oscillations and resonance fluorescence from a single hexagonal boron nitride quantum emitter

Cited by 76 publications

References 50 publications

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Phonon sidebands of color centers in hexagonal boron nitride

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

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