Rabi Flopping in Semiconductors

Cundiff, Steven T.; Knorr, Andreas; Feldmann, Jochen; Koch, S. W.; Göbel, E. O.; Nickel, H.

doi:10.1103/physrevlett.73.1178

Cited by 158 publications

(98 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1 More specifically, investigations of coherent quantum optics phenomena in condensed matter and mesoscopic systems are actively being pursued. 2 In particular, ultrafast semiconductor analogs of quantum optical phenomena such as Rabi flopping 3 and superradiance 4 have been investigated.…”

Section: Introductionmentioning

confidence: 99%

Cooperative recombination of electron-hole pairs in semiconductor quantum wells under quantizing magnetic fields

et al. 2010

View full text Add to dashboard Cite

We present results of detailed investigations of light emission from semiconductor multiple quantum wells at low temperatures and high magnetic fields excited by intense femtosecond laser pulses. The intensity and linewidth as well as the directional and statistical properties of photoemission strongly depended on the magnetic field strength and pump laser fluence. We also investigated the effects of spot size, temperature, excitation geometry, and excitation pulse width on the emission properties. The results suggest that the initially incoherent photoexcited electron-hole pairs spontaneously form a macroscopic coherent state upon relaxation into the low-lying magnetoexcitonic states, followed by the emission of a superfluorescent burst of radiation. We have developed a theoretical model for superfluorescent emission from semiconductor quantum wells, which successfully explained the observed characteristics.

show abstract

Section: Introductionmentioning

confidence: 99%

Cooperative recombination of electron-hole pairs in semiconductor quantum wells under quantizing magnetic fields

et al. 2010

View full text Add to dashboard Cite

show abstract

“…This phenomenon constitutes the limit of strong lightmatter coupling, which itself lies at the heart of both nuclear magnetic and electron spin resonance. Since this general quantum mechanical formulation of nonperturbative transitions by Isidor Rabi, interest has emerged in such strong coupling in a variety of electrodynamic phenomena, including optical transitions in atoms, [112] molecules, [4,113,114] semiconductors, [115][116][117][118][119][120][121][122][123] and even superconducting Josephson junctions. [124] In the context of our discussion of optoelectronic organic materials, optical manifestations of strong light-matter coupling are particularly interesting.…”

Section: Coherent Optoelectronicsmentioning

confidence: 99%

“…Use of coherent spectroscopic techniques that measure the optical polarization of a material, such as degenerate four-wave mixing, allows the observation of polarization Rabi flopping in an ensemble. [115] The physics of this experiment on a two-level system can be translated directly to the case of electron spins (or nuclear spins for nuclear magnetic resonance). An external magnetic field B 0 creates a macroscopic magnetization in the paramagnetic ensemble of spins, which is perturbed by a periodically varying field B 1 , usually applied perpendicular to B 0 .…”

Section: Coherent Optoelectronicsmentioning

confidence: 99%

Coherent Spin Manipulation in Molecular Semiconductors: Getting a Handle on Organic Spintronics

Lupton¹,

McCamey²,

Boehme³

2010

ChemPhysChem

View full text Add to dashboard Cite

Organic semiconductors offer expansive grounds to explore fundamental questions of spin physics in condensed matter systems. With the emergence of organic spintronics and renewed interest in magnetoresistive effects, which exploit the electron spin degree of freedom to encode and transmit information, there is much need to illuminate the underlying properties of spins in molecular electronic materials. For example, one may wish to identify over what length of time a spin maintains its orientation with respect to an external reference field. In addition, it is crucial to understand how adjacent spins arising, for example, in electrostatically coupled charge‐carrier pairs, interact with each other. A periodic perturbation of the field may cause the spins to precess or oscillate, akin to a spinning top experiencing a torque. The quantum mechanical characteristic of the spin is then defined as the coherence time, the time over which an oscillating spin, or spin pair, maintains a fixed phase with respect to the driving field. Electron spins in organic semiconductors provide a remarkable route to performing “hands‐on” quantum mechanics since permutation symmetries are controlled directly. Herein, we review some of the recent advances in organic spintronics and organic magnetoresistance, and offer an introductory description of the concept of pulsed, electrically detected magnetic resonance as a technique to manipulate and thus characterize the fundamental properties of electron spins. Spin‐dependent dissociation and recombination allow the observation of coherent spin motion in a working device, such as an organic light‐emitting diode. Remarkably, it is possible to distinguish between electron and hole spin resonances. The ubiquitous presence of hydrogen nuclei gives rise to strong hyperfine interactions, which appear to provide the basis for many of the magnetoresistive effects observed in these materials. Since hyperfine coupling causes quantum spin beating in electron–hole pairs, an extraordinarily sensitive probe for hyperfine fields in such pairs is given.

show abstract

“…These lead-off experiments exploiting field amplitudes of the order of 1 MV/cm have been limited to model systems with especially large dipole moments. It has been shown that Rabi oscillations can be driven resonantly in semiconductors with intense optical pulses [6,7]. The latest development of an ultraintense laser source for MIR pulses with peak fields exceeding 100 MV/cm paves the way towards a systematic study of extreme THz nonlinearities [8,9].…”

mentioning

confidence: 99%

Non-perturbative four-wave mixing in InSb with intense off-resonant multi-THz pulses

Mayer

Junginger

Schmidt

et al. 2013

EPJ Web of Conferences

View full text Add to dashboard Cite

Abstract. High-field multi-THz pulses are employed to analyze the coherent nonlinear response of the narrow-gap semiconductor InSb which is driven off-resonantly. Fieldresolved four-wave mixing signals manifest the onset of a non-perturbative regime of Rabi flopping at external amplitudes above 5 MV/cm per pulse. Simulations based on a two-level quantum system confirm these experimental results.Two-dimensional spectroscopy has been a powerful tool to examine spectral correlations and ultrafast dynamics in condensed-matter systems. For example, studies in the near-(NIR) and midinfrared (MIR) spectral region [1] have provided insight into molecular structures of proteins [2]. At yet lower THz frequencies two-dimensional spectroscopy has been anticipated to provide access to fundamental low-energy excitations such as inter-molecular motion in water [3] or gap dynamics in superconductors [4].Recently, a promising THz multi-wave mixing has been suggested [5]. These lead-off experiments exploiting field amplitudes of the order of 1 MV/cm have been limited to model systems with especially large dipole moments. It has been shown that Rabi oscillations can be driven resonantly in semiconductors with intense optical pulses [6,7]. The latest development of an ultraintense laser source for MIR pulses with peak fields exceeding 100 MV/cm paves the way towards a systematic study of extreme THz nonlinearities [8,9]. Based on the electro-optic detection scheme, the time trace of the carrier field can be retrieved with absolute amplitude and phase.Here, a high-field THz laser system is employed to study the nonlinear response of bulk semiconductors using a two-dimensional spectroscopy scheme [5]. We show that in spite of the excitation far below the interband resonance extreme THz electric fields are able to coherently drive a system close to population inversion.Our THz multi-wave mixing experiment is performed in the narrow-gap semiconductor indium antimonide InSb (E g /h = 41.1 THz) at room temperature. An undoped (100)-oriented single crystal has been mechanically polished to a thickness of 30 µm facilitating THz transmission. Intense THz transients centered at 25 THz are obtained by difference frequency mixing of near-infrared pulse trains in a GaSe emitter. All relevant frequency components are located well below the fundamental band gap of InSb. In contrast to previous studies [5], the generation of double pulses is implemented in our setup by splitting the THz beam after the emitter crystal to preclude nonlinear mixing effects of two beams within the emitter itself. Two equally intense transients are obtained via a Au-coated EPJ Web of Conferences

show abstract

Rabi Flopping in Semiconductors

Cited by 158 publications

References 17 publications

Cooperative recombination of electron-hole pairs in semiconductor quantum wells under quantizing magnetic fields

Cooperative recombination of electron-hole pairs in semiconductor quantum wells under quantizing magnetic fields

Coherent Spin Manipulation in Molecular Semiconductors: Getting a Handle on Organic Spintronics

Non-perturbative four-wave mixing in InSb with intense off-resonant multi-THz pulses

Contact Info

Product

Resources

About