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Kadokura, S.

doi:10.3131/jvsj.44.808

Cited by 3 publications

(3 citation statements)

References 1 publication

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“…Details on FTS method and film preparation are described elsewhere [14,18,19]. The base pressure of the sputtering chamber was around 5.0 × 10 − 5 Pa. FeSi 2 (purity: 4 N), Fe (purity: 5 N) and Si (purity: 9 N) targets installed in three separated FTS units were used as sputtering source materials.…”

Section: Methodsmentioning

confidence: 99%

Formation of β-FeSi2 thin films on non-silicon substrates

Liu¹,

Osamura²,

Ootsuka³

et al. 2006

Thin Solid Films

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Section: Methodsmentioning

confidence: 99%

Formation of β-FeSi2 thin films on non-silicon substrates

Liu¹,

Osamura²,

Ootsuka³

et al. 2006

Thin Solid Films

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“…During the initial stage of this study, the IZO films were deposited by facing target sputtering (FTS) because FTS is good for reducing the bombardment of high-energy particles and separating the plasma from the substrate. 8) Figure 3 shows a schematic of FTS. FTS has two facing sputtering targets so that most of the high-energy particles, for example reflected Ar neutrals or negative oxygen ions, move towards a target instead of the substrate.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…It is reported that V 2 O 5 has high performance of hole injection to N,N 0 -diphenyl-N,N-bis(3-methylphenyl)1,1 0 -biphenyl-4,4 0 diamine (TPD) and 4,4 0 -bis[N-(1-naphthyl)-Nphenyl-amino]biphenyl (NPD). 8,10) We considered that V 2 O 5 injects holes to HTL1 as well as TPD because the ionization potential of HTL1 is closer to the work function of V 2 O 5 than to that of TPD, as shown in Table I. The resistance of the HIL is not large, but omitting the HIL was expected to have some effect on decreasing the total resistance of the device.…”

Section: Effect Of V 2 O 5 Buffer Layermentioning

confidence: 99%

High-Efficiency and High-Operational-Stability Top-Emitting Organic Light-Emitting Diodes Using Antioxidant Buffer Layer

Murakami¹,

Shimizu²,

Aratani³

et al. 2009

Jpn. J. Appl. Phys.

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We have succeeded in developing top-emitting organic light-emitting diodes (OLEDs) with high efficiency and high operational stability using an antioxidant buffer layer. V 2 O 5 was selected as the antioxidant buffer layer to suppress the degradation of the organic materials of OLEDs caused by active oxygen during buffer layer deposition and the damage caused by the bombardment of high-energy particles during transparent electrode sputtering. The top-emitting device with a V 2 O 5 buffer layer had the same current density-voltage (J-V ) characteristics as the bottom-emitting device with the same material system. The quantum efficiency of the top-emitting device was about 5%, the same as that of the bottom-emitting device. The time required for luminance to drop to 90% of the initial value of the top-emitting device was over 700 h, which is longer than that of the bottom-emitting device (300 h). From X-ray photoelectron spectroscopy (XPS) analysis of the interface between organic materials and V 2 O 5 , it was determined that there was no degradation of organic materials under V 2 O 5 .

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Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers

Liu

Suzuki

Osamura

et al. 2004

Journal of Applied Physics

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We fabricated continuous highly (110)/(101)-oriented β-FeSi2 films on Si (111) substrates by the facing-target sputtering method. An epitaxial thin β-FeSi2 template buffer layer preformed on the silicon substrate was found to be essential in the epitaxial growth of thick β-FeSi2 films. It was proved that the template reduced the iron diffusion into the silicon substrate during thick β-FeSi2 film fabrication. Even though the annealing was performed at high temperature (880 °C) for a long duration (10 h), iron diffusion was effectively hindered by the template. By introducing this template buffer layer, an abrupt interface without appreciable defects between the β-FeSi2 film and the silicon substrate formed. The mechanism for the reduction of iron diffusion by the template buffer layer is discussed.

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Untitled

Cited by 3 publications

References 1 publication

Formation of β-FeSi2 thin films on non-silicon substrates

Formation of β-FeSi2 thin films on non-silicon substrates

High-Efficiency and High-Operational-Stability Top-Emitting Organic Light-Emitting Diodes Using Antioxidant Buffer Layer

Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers

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