Among the ultra-wide band gap transparent semiconducting oxides (TSOs), β-Ga 2 O 3 has attracted a lot of interest because its pseudo-direct band gap of 4.85 eV yields a high breakdown voltage and provides transparency in the UV-range. [1][2][3][4][5] These properties are accompanied by a good thermal stability, allowing the growth of bulk β-Ga 2 O 3 single crystals from the melt. [6,7] Accordingly, β-Ga 2 O 3 is seen as a potential candidate for high-power electronic devices and deep-UV optoelectronic devices. [8,9] The drawbacks are its mechanical, optical, and thermal anisotropies, due to the monoclinic crystal structure, which make the fabrication of substrates and devices a challenging task. [10] For applications, a material with a band gap as wide as that of β-Ga 2 O 3 , but of higher symmetry, would therefore be highly desirable. Recently, Galazka et al. reported bulk, melt-grown ZnGa 2 O 4 (ZGO) single-crystals of high structural quality, from which differently oriented insulating and semiconducting wafers could be prepared. [11,12] ZGO crystallizes in a cubic spinel structure (Fd3m space group), as illustrated with a ball and stick model in Figure 1. Spinel refers to a class of compounds with a chemical formula AB 2 X 4 , in which A is a divalent cation like Zn, B is a trivalent cation like Ga, and X is a divalent anion like O. In the normal spinel structure of ZGO, Zn occupies the tetrahedral sites, while Ga occupies the octahedral sites. During growth from the melt, at high temperatures, the occupation of octahedral, and tetrahedral sites is random. [11] A long cool down stabilizes the normal spinel structure, while antisite defects are introduced by shorter cool down times. Antisite defects lead to n-type conductivity with free electron concentrations in the order of 10 18 -10 19 cm À3 . Upon post-growth annealing at 800-1400 C for 10 h or 700 C for 40 h in oxidizing atmosphere ZGO crystals can turn into an insulating state. [11][12][13] Thanks to its cubic spinel structure, ZGO has isotropic thermal and optical properties. The optical band gap of ZGO was found to be 4.6 eV wide, close to that of β-Ga 2 O 3 and no preferred cleavage plane was observed. [11,12] These promising characteristics resulted in extensive research activities on the fundamental physical properties of the