Computational Materials Science
 2005
DOI: 10.1016/j.commatsci.2004.12.026
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Quenching-dependent reversible modification of electronic structure of proton-implanted silicon

S. Zh. Tokmoldin
1
,
Х.А. Абдуллин
2
,
A.T. Issova
3
et al.
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Cited by 2 publications
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