QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

Deixler, P.; Rodríguez, Alberto; Boer, Wiebe de; Sun, Haitao; Colclaser, Roy A.; Bower, D.; Bell, N.; Yao, A.; Brock, Reinhard; Bouttement, Y.; Hurkx, G.A.M.; Tiemeijer, L.F.; Paasschens, J.C.J.; Huizing, H.G.A.; Hartskeerl, D.M.H.; Agrarwal, P.; Magnee, P.H.C.; Aksen, E.; Slotboom, J.W.

doi:10.1109/bipol.2004.1365788

Cited by 34 publications

(22 citation statements)

References 3 publications

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“…This is an undesired effect, since differential pair amplifiers operated at peakf T have a reduced bandwidth in the newer generation, despite the increase in f T and f max . The reduction of R b by a factor of two in [5]c shifts the saturation of f out to higher currents resulting in a substantially increased peak-f A and f cross . In a final step, f T and f max were further increased to values around 130 GHz without compromising f A and f cross .…”

Section: F Crossmentioning

confidence: 99%

“…This resulted in an increased gm·Rb at peak-f T , and thus a more dominant effect of the output bandwidth to f A due to the Miller effect in C bc as follows from equation (2). Process [5] is currently still under development. In Table I For process variants [3], [4] and [5]a, the peak-f A occurs at an approximately constant current density (where gm·R b 1 to 2), and thus the ratio between the current densities for peak-f T versus peak-f A increased when migrating from [3] to [5]a.…”

Section: F Crossmentioning

confidence: 99%

“…Despite the increase in f T and f max from [3] to [4], a relatively poor improvement in broadband circuit bandwidths was found. Reversely, the transition from [4] to [5] resulted in a significant circuit performance increase. In Section IV, some circuit examples and their relation to device metrics will be described.…”

Section: Introductionmentioning

confidence: 99%

“…Process [5] is currently still under development. In Table I For process variants [3], [4] and [5]a, the peak-f A occurs at an approximately constant current density (where gm·R b 1 to 2), and thus the ratio between the current densities for peak-f T versus peak-f A increased when migrating from [3] to [5]a. This is an undesired effect, since differential pair amplifiers operated at peakf T have a reduced bandwidth in the newer generation, despite the increase in f T and f max .…”

Section: F Crossmentioning

confidence: 99%

“…In Section III, the evolution of these metrics across 3 generations of a BiCMOS process is reviewed. While the transition from [3] to [4] was driven by metrics f T and f max , the transition from [4] to [5] was driven by f T , f A and f cross . Despite the increase in f T and f max from [3] to [4], a relatively poor improvement in broadband circuit bandwidths was found.…”

Section: Introductionmentioning

confidence: 99%

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10-40GHz design in SiGe-BiCMOS and Si-CMOS linking technology and circuits to maximize performance

Veenstra

Hurkx

Heijden

et al. 2005

2005 European Microwave Conference

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-This paper reviews the relevance of the widely used device metrics f T , f max as well as the recently introduced device metrics f A and f cross for broadband circuit design. Usually, IC processes are benchmarked on the basis of their f T and f max . For most circuit applications however, there is only an indirect relation between f T , f max and circuit bandwidths. Since the differential pair amplifier is a key building block in broadband circuits, the metric f A provides a nearly direct relation to broadband circuit performance. This is demonstrated via the maximum operating frequency of a current-mode logic frequency divider, processed in 3 generations of a BiCMOS process. Metric f cross is valuable for the design of circuits employing a cross-coupled differential pair as active negative resistance, such as in LCVCOs. The metrics can be expressed in terms of transistor parameters (e.g., R b , C bc , …), allowing to derive a link between circuit performance and technology. Based on our experience, we evaluate IC processes on the basis of f T , f A and f cross rather than f T and f max .

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Section: F Crossmentioning

confidence: 99%

Section: F Crossmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: F Crossmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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10-40GHz design in SiGe-BiCMOS and Si-CMOS linking technology and circuits to maximize performance

Veenstra

Hurkx

Heijden

et al. 2005

2005 European Microwave Conference

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V‐band low phase‐noise oscillator based on a cavity resonator integrated in the silicon substrate of the MCM‐D platform

Dancila

Rottenberg

John

et al. 2012

Micro & Optical Tech Letters

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In this article, we present a V‐band low‐phase‐noise oscillator stabilized by a silicon integrated cavity resonator (SiCR). The SiCR is realized in a multi chip module‐deposited thin‐film technology platform. The high resistivity silicon substrate is thinned to 100 μm and through silicon vias are available. The resonator is formed by a double row of through silicon vias defining a TM010 cylindrical cavity resonator. The area on top of the resonator is reused for flip‐chip mounting the active device, a MMIC chip realized in BiCMOS technology, implementing SiGe heterojunction bipolar transistors. A lower phase noise is demonstrated for the oscillator using SiCR in comparison with an idle oscillator using the same active device but a shorted CPW line as resonator. In the best case, the phase‐noise of the oscillator with SiCR is reduced to −102 dBc/Hz at 1‐MHz carrier offset, fosc = 54 GHz, from −89 dBc/Hz at 1 MHz carrier offset, fosc = 47.3 GHz, corresponding to the idle oscillator, using the CPW resonator. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1788–1792, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26946

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Low-Noise Amplifiers for Cellular Wireless Infrastructure

Leenaerts

2013

Advances in Analog and RF IC Design for Wireless Communication Systems

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QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

Cited by 34 publications

References 3 publications

10-40GHz design in SiGe-BiCMOS and Si-CMOS linking technology and circuits to maximize performance

10-40GHz design in SiGe-BiCMOS and Si-CMOS linking technology and circuits to maximize performance

V‐band low phase‐noise oscillator based on a cavity resonator integrated in the silicon substrate of the MCM‐D platform

Low-Noise Amplifiers for Cellular Wireless Infrastructure

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