Quaternary nitride heterostructure field effect transistors

Khoshroo, L. Rahimzadeh; Ketteniss, N.; Mauder, C.; Behmenburg, H.; Woitok, J.; Booker, Ian Don; Gruis, J.; Heuken, M.; Vescan, A.; Kalisch, H.; Jansen, R.H.

doi:10.1002/pssc.200983614

Cited by 10 publications

(3 citation statements)

References 13 publications

(15 reference statements)

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“…The results of modeling are shown in Figure 4 . It has been shown that for the best lattice-matching the Al/In ratio should be 4.63 [ 33 , 34 ]. The composition of the modeled quaternary heterostructure demonstrated a very similar Al/In ratio of 4.70.…”

Section: Resultsmentioning

confidence: 99%

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

et al. 2022

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A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of the layer were investigated planning realization of microwave power and terahertz plasmonic devices. The measured X-ray diffraction and modeled band diagram characteristics revealed the structural parameters of the grown In0.165Al0.775Ga0.06N/Al0.6Ga0.4N/GaN heterostructure, explaining the origin of barrier photoluminescence peak position at 3.98 eV with the linewidth of 0.2 eV and the expected red-shift of 0.4 eV only. The thermally stable density of the two-dimension electron gas at the depth of 10.5 nm was experimentally confirmed to be 1.2 × 1013 cm−2 (1.6 × 1013 cm−2 in theory) with the low-field mobility values of 1590 cm2/(V·s) and 8830 cm2/(V·s) at the temperatures of 300 K and 77 K, respectively.

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Section: Resultsmentioning

confidence: 99%

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

et al. 2022

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“…Recently, high electron mobility transistors (HEMTs) based on AlGaN/AlN/GaN heterostructures, attracted considerable attention for high‐power and high‐frequency applications . Further improvement of HEMT performance can be reached by increasing the Al content in the barrier layer at the cost of strain‐induced defects such as misfit dislocations and cracks caused by large lattice mismatch which also reduces the critical thickness of the strained AlGaN barrier .…”

Section: Introductionmentioning

confidence: 99%

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching

Riedmüller

Steinmann

Grünenpütt

et al. 2018

Physica Status Solidi (a)

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In this paper, the influence of a recess etching process on the contact resistance and the relevant electrical properties of In 0.12 Al 0.8 Ga 0.08 N/AlN/ GaN HEMTs is presented. Without etching, the contact resistance is typically 0.9 Ω mm. By recess etching R cont is reduced to 0.2 Ω mm. A strong correlation of R cont to the maximum drain saturation current (I DSþ ) and to the maximum transconductance (G mMax ) is observed. Devices with R cont of 0.2 Ω mm show I DSþ of 1.7 A mm À1 and G mMax of 620 mS mm À1 , respectively.

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“…With a reduced polarization compared to barriers with reduced Al-content, normally off behaviour is possible while maintaining a sufficiently large conduction band offset. There has been some research effort on the quaternary barrier material both by metal organic chemical vapour deposition (MOCVD) [11][12][13] as well as by molecular beam epitaxy, so far [14,15]. Anyhow, there are only two publications regarding quaternary AlInGaN enhancementmode devices [16,17].…”

Section: Introductionmentioning

confidence: 99%

First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

Hahn

Reuters

Wille

et al. 2012

Semicond. Sci. Technol.

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One current focus of research is the realization of GaN-based enhancement-mode devices. A novel approach for the realization of enhancement-mode behaviour is the utilization of polarization matching between the barrier and the GaN buffer. Yet, the utilization of a quaternary barrier combining polarization engineering together with a large conduction band offset has not been demonstrated so far. Here, epitaxially grown, compressively strained AlInGaN is applied as a nearly polarization-matched barrier layer on GaN resulting in enhancement-mode operation. The insulated-gate devices are fabricated gate-first with Al 2 O 3 as gate dielectric. Passivated metal insulator semiconductor heterostructure field effect transistors yielded threshold voltages (V th ) of up to +1 V. The devices withstand negative and positive gate-biased stress and a positive V th is maintained even after long-time negative bias stress.

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Quaternary nitride heterostructure field effect transistors

Cited by 10 publications

References 13 publications

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching

First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

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