Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

Abstract

Light emission enhancement in blue InGaAlN/InGaN quantum well structures Appl. Phys. Lett. 99, 181101 (2011); 10.1063/1.3657141 In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wellsElectronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (h < 40 ) from c-plane, the AlInGaN/InGaN system is shown to have $3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light. V C 2015 AIP Publishing LLC. [http://dx.

Polarization Properties of Wurtzite III-Nitride Alloys Using the Hexagonal Reference Structure

“…(AlInGa)N systems have been already exploited in the fabrication of green, white and ultraviolet light-emitting diodes. [41][42][43] However, there are still some polarization-related obstacles to achieving high-efficiency devices. In the lighting industry, one bottleneck limiting device performance arises from the existence of strong electric fields induced by polarization discontinuities between different layers.…”