Quasifree knock-out of proton pairs in the reaction C(p,3p) at 640 MeV

Komarov, V.I.; Kosarev, G.E.; Netzband, D.; Müller, H.; Stiehler, T.; Tesch, S.

doi:10.1088/0305-4616/5/12/010

Cited by 8 publications

(6 citation statements)

References 5 publications

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“…However, there are few MD simulation studies of the interface conductance of metal-semiconductor interfaces, because of the inherent difficulty associated with including contributions of both electrons and phonons to heat transport in MD simulation. 16 Using MD simulations, Cruz et al calculated the thermal interface conductance of Au/Si at 300 K, 17 and the value of 188 MW/m 2 -K is in good agreement with the measurement results with values ranging between 133 and 182 MW/m 2 -K. 18 Including electron-phonon couplings in MD simulation using the method described by Duffy and Rutherford, 19 Wang et al calculated interfacial thermal conductance of Cu/Si with values around 400 MW/m 2 -K, which is in better agreement with experimental data compared to those without electron-phonon couplings in MD (~450 MW/m 2 -K). 20 In this letter, we calculated the thermal interface conductance of an Al/Si interface using non-equilibrium MD (NEMD) simulations, considering both the first and the third channels' contribution to heat transfer across interfaces.…”

Section: Introductionmentioning

confidence: 67%

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Yang¹,

Luo²,

Esfarjani³

et al. 2015

j comput theor nanosci

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The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance and the effect of electron-phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We find that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface.There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces.

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Section: Introductionmentioning

confidence: 67%

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Yang¹,

Luo²,

Esfarjani³

et al. 2015

j comput theor nanosci

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“…where ( [14,[27][28][29] or even cluster production [30] might play an important role. The differential pion multiplicity f. (k~) as emerging from A decay can now easily be evaluated from the isotropic two-body decay of the A resonance.…”

Section: The Quantity R (M)/(r (M)+ F(m)) In (6) Describesmentioning

confidence: 99%

K + production in proton and deuteron induced reactions at subthreshold energies

Cassing

Demski

Jarczyk

et al. 1994

Z. Physik A - Hadrons and Nuclei

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Abstract. The production of K § mesons in proton-nucleus and deuteron-nucleus collisions is analyzed with respect to one-step nucleon-nucleon (NN~NAK +), A-nucleon (AN~NAK+) and two-step pion-nucleon (~N~K § A) production channels on the basis of experimental ground state momentum distributions and free on-shell production processes. Whereas for K § production in proton-nucleus reactions the secondary channel ~N clearly dominates at subthreshold energies, meson and nucleon induced channels are of similar magnitude in deuteron-nucleus reactions. Contrary to nucleus-nucleus collisions the A induced reaction channels are found to be of minor importance. The experimental differentiation of the underlying microscopic reaction channels appears possible via differential proton K § coincidence measurements as shown in detail by the microscopic simulations including proton rescattering.

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“…There has been an intensive experimental program directed toward the systematic characterization of the emission of backward going nucleons from nuclei in collisions with high energy (> 1 GeV) hadrons [1,2,3,4], real photons [5], virtual photons [1], neutrinos and antineutrinos [6,7,8]. In these experiments the nucleons were emitted into angles larger than 90 o in the laboratory system.…”

Section: Introductionmentioning

confidence: 99%

“…One of the more extreme models in this class assumes that the high momentum of the struck nucleon is balanced coherently by the residual nucleus [19,20]. A second class of models [21,4] assumes that the backward yield is due to rescattering processes in the nucleus of the incident and outgoing particles. These initial and final interactions include true π-absorption and ∆-rescattering in the intermediate states.…”

Section: Introductionmentioning

confidence: 99%

Backward emitted high-energy neutrons in hard reactions ofpandπ+on carbon

et al. 2001

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Beams of protons and pions of 5.9 GeV/c were incident on a C target. Neutrons emitted into the back hemisphere, in the laboratory system, were detected in (triple) coincidence with two emerging p t >0.6 GeV/c particles. We present the momentum spectra of the backward going neutrons, which have the same universal shape observed in earlier (inclusive) reactions induced by hadrons, γ, ν, andν beams. We also integrated the spectra and determined the fraction of the hard scattering events which are in coincidence with at least one neutron emitted into the back hemisphere, with momenta above 0.32 GeV/c. Contrary to the earlier measurements which found that only a small fraction (of the order of 10%) of the total inelastic cross section for light nuclei was associated with backward going nucleons, we find that about half of the events are of this nature. We speculate that the reason for the large difference is the strong total center of mass (s) dependence of the hard reaction and short range nucleon correlations in nuclei. 24.50.+g 1

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Quasifree knock-out of proton pairs in the reaction C(p,3p) at 640 MeV

Cited by 8 publications

References 5 publications

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

K + production in proton and deuteron induced reactions at subthreshold energies

Backward emitted high-energy neutrons in hard reactions ofpandπ+on carbon

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