Quasi-two-dimensional electron layer in ZnCdHgTe and PbS heterostructures

Luminescence of quasi-2DEG in heterostructures based on PbS films

“…The energy positions of the emitted radiation maximums are estimated to be about 1.97-2.00 eV; These results show that the emission processes are take place in the subsurface region of the wide-gap material, such a value corresponds neither lead sulfide nor zinc selenide energy parameters as well as the energy levels of the known and uncontrolled impurities. The previous studies [1] were shown the formation of the quasi-2D electron system at the interface of the examined heterostructures. The experimental results obtained under the electro-and photoluminescent measurements had allowed to conclude that the investigated structure presents a multi-QW continuum localized at the interface.…”

“…At present, MBE (molecular-beam technology) is the most mature method of device-quality layer fabrication. In particular, semiconductor devices based on 2 6 4 6 A B -A B heterostructures are of special importance due to the well-known "windoweffect" as well as a possibility to act as a system of quasi-2D or quasi-3D charge carriers, as it was shown earlier [1]. The paper presents results of photoluminescence studies performed at 77 K on the isotype n-n-heterojunctions PbS/ZnSe obtained by the MBE technology.…”