2010
DOI: 10.1134/s1054660x10190138
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Quasi-three-level Nd:YVO4 laser by diode pumping at 888 nm

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Cited by 22 publications
(12 citation statements)
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“…As shown in Fig. 3 [9]. The absorption band at 806.5 nm has a full width at half maximum (FWHM) of 6.6 nm, which is suitable for AlGaAs diode laser pumping.…”
Section: Absorption Spectramentioning
confidence: 97%
“…As shown in Fig. 3 [9]. The absorption band at 806.5 nm has a full width at half maximum (FWHM) of 6.6 nm, which is suitable for AlGaAs diode laser pumping.…”
Section: Absorption Spectramentioning
confidence: 97%
“…Employing nonlinear optics, optically pumped semiconductor lasers are capable of providing 350-600 nm radiation. As far as solid-state lasers concerned, the 456.0, 457.0, and 449.5 nm laser radiation was obtained in a diode-pumped frequency-doubled Nd:GdVO 4 , Nd:YVO 4 , and Nd:YAG lasers, respectively [34][35][36][37].…”
Section: The Second Harmonic Generationmentioning
confidence: 99%
“…The growth technique used for YVO 4 crystals is mature and more companies are now capable of fabricating YVO 4 crystals. In recent years, the fabrication cost has substantially reduced due to strong commercial demand for near infrared lasers operating in continuous wave (CW) [7,8], Q-switched [9], and mode locked [10] regimes at 914 nm [7], 1064 nm [8,11,12], 1.34 μm [9], and green laser generation using Nd 3+ :YVO 4 [13,14].…”
Section: +mentioning
confidence: 99%