Quasi-three-level Nd:GdVO₄laser under diode pumping directly into the emitting level

Abstract

Abstract:We present experimental investigation on quasi-threelevel operation of Nd:GdVO4 laser under 879 nm laser diode pumping into the emitting level. By using a 5-mm-long, 0.2-at.% bulk crystal, the maximal 3.65 W continuous wave 912 nm laser is obtained under 16.5 W pump power. The slope efficiency is 35.9% and the optical conversion efficiency is 22.1% with respect to the absorbed pump power. The beam quality factor is about 1.83 for 3.0 W output power at 912 nm. The good results demonstrate that the 879 nm direct pumping can also be used in the quasi-three-level systems.

Laser diode end-pumped V:YAG passively Q-switched UV lasers at 335 nm

“…In order to solve this problem, one promising technique which fulfill these requirements is select a pump source at 888 nm or 879 nm directly to the upper emission level [23,24], another technique is use double end pump configuration [25] and at the same time lower the doping concentration of the laser crystal to enhance the homogeneous pump light distribution to avoided the fracture and scaling the output power at higher pump power [26].…”

All solid-state CW Nd:LuVO4-LBO yellow-green laser under direct 888 nm pumping

“…Successful attempts to lase the Nd:LuVO 4 have been reported [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52]. Recently, the Nd:LuVO 4 laser under direct 880 nm diode laser pumping was reported [53][54][55][56][57][58]. In 2010, Lü et al reported diode pumped Nd:LuVO 4 laser emitting at 1089 nm for the first time.…”

Continuous-wave Nd:GdVO4/LBO laser at 541.5 nm under diode pumping into the emitting level

“…A more efficient pumping method was presented and researched [44][45][46][47][48], which was to pump the Nd 3+ ions directly into the 4 F 3/2 upper lasing level.…”