Quasi-phasematched frequency conversion in thick allepitaxial, orientation-patterned GaAs films

Eyres, L.A.; Tourreau, P.J.; Pinguet, Thierry; Ebert, C.B.; Harris, James S.; Fejer, M. M.; Gérard, Bruno; Becouarn, L.; Lallier, Éric

doi:10.1364/assl.2000.tua2

Cited by 10 publications

(10 citation statements)

References 6 publications

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“…These results show similar crystal quality to OP-GaAs films obtained from templates with offcut (100) substrate and domain walls on (011) planes. 8,11 However, the growth rate on templates with on-axis (100) substrate was higher than expected. 8 The previous study by Bliss et al 8 shows that the thick film growth rate on OPGaAs templates fabricated using a Ge layer depends on the offcut angle of the substrate.…”

Section: N T a M I N A T I O N A C C U M U L A T E D A R O U N D T H mentioning

confidence: 75%

“…A final quick dipped in H 2 O 2 followed by 1:1 HCl:H 2 O was used to eliminate aluminum-containing residues. 16,11 Using high selectivity wet etch solution with the AlGaAs etch stop layer prevents crystal damage generated during lapping from propagating into the GaAs epitaxial layer. After removing the protective photoresist on the backside of the supporting GaAs substrate, photoresist lithography was employed to pattern the grating structure on the epitaxial GaAs layer.…”

Section: Experiments Detailsmentioning

confidence: 99%

“…One approach is based on Molecular Beam Epitaxial (MBE) growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy. 9,10,11 By inserting a thin layer of Ge (~ 3 nm) on a (100) GaAs substrate slightly misoriented (≤4°) towards a (111)B plane, an antiphase GaAs layer can be obtained under proper growth conditions. The other approach bonds two wafers that are carefully aligned with inverted phase domains.…”

Section: Introductionmentioning

confidence: 99%

“…This freedom in choice of the orientation can be further explored for QPM and integrated device applications. [3][4][5][6][7][8]11 From the refractive index measurements for GaAs at 25°C, 12 the calculated relationships between idler and signal wavelengths (λ) across a range of QPM periods and for three pump wavelengths are shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

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Wafer-fused orientation-patterned GaAs

Fenner

Termkoa

et al. 2008

Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. (From -To) REPORT DATE (DD-MM-YYYY) 13-02-2008 REPORT TYPE Conference Proceeding Paper DATES COVERED SPONSOR/MONITOR'S ACRONYM(S)AFRL/RYHC SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES)Electromagnetics ABSTRACTThe fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process where an OPGaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 µm thick OPGaAs film was grown on the template at an average rate of ~70 µm/hr by HVPE. The antiphase domain boundaries were observed to propagate vertically and with no defects visible by Nomarski microscopy in stain-etched cross sections. The optical loss at ~2 μm wavelength over an 8 mm long OP-GaAs grating was measured to be no more than that of the semiinsulating GaAs substrate. This template fabrication process can provide more flexibility in arranging the orientation of the crystal domains compared to the Ge growth process and is scalable to quasi-phase-matching (QPM) devices operating from the IR to terahertz frequencies utilizing existing industrial foundries. SUBJECT TERMS ABSTRACTThe fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process where an OP-GaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 µm thick OP-GaAs film was grown on the template at an average rate of ~70 µm/hr by HVPE. The antiphase...

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Section: N T a M I N A T I O N A C C U M U L A T E D A R O U N D T H mentioning

confidence: 75%

Section: Experiments Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Wafer-fused orientation-patterned GaAs

Fenner

Termkoa

et al. 2008

Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII

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“…20 Potentially, the same sensor architecture also can be used to access the second atmospheric window from 6 to 16 m with orientation-patterned epitaxial-grown quasiphase-matched GaAs crystal for optical frequency conversion. 21 …”

Section: Discussionmentioning

confidence: 99%

Development of an automated diode-laser-based multicomponent gas sensor

2000

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OSA grants to the Author(s) (or their employers, in the case of works made for hire) the following rights:(b)The right to post and update his or her Work on any internet site (other than the Author(s') personal web home page) provided that the following conditions are met: (i) access to the server does not depend on payment for access, subscription or membership fees; and (ii) any such posting made or updated after acceptance of the Work for publication includes and prominently displays the correct bibliographic data and an OSA copyright notice (e.g. "© 2009 The Optical Society"). 17th December 2010 date 'rights url' accessed / permission obtained: (overwrite text) Development of an automated diode-laser-based multicomponent gas sensorDirk Richter, David G. Lancaster, and Frank K. TittelThe implementation and application of a portable fiber-coupled trace-gas sensor for the detection of several trace gases, including CO 2 , CH 4 , and H 2 CO, are reported. This particular sensor is based on a cw fiber-amplified near-infrared ͑distributed Bragg reflector͒ diode laser and an external cavity diode laser that are frequency converted in a periodically poled lithium niobate crystal to the mid-IR spectroscopic fingerprint region ͑3.3-4.4 m͒. A continuous absorption spectrum of CH 4 and H 2 CO from 3.37 to 3.70 m with a spectral resolution of 40 MHz ͑ϳ0.0013 cm Ϫ1͒ demonstrated the spectral performance that can be achieved by means of automated wavelength tuning and phase matching with stepper motor control. Autonomous long-term detection of ambient CO 2 and CH 4 over a 3-and 7-day period was also demonstrated.

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Mid‐IR by Nonlinear Optical Frequency Conversion

2020

Laser‐based Mid‐infrared Sources and Applications

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Quasi-phasematched frequency conversion in thick allepitaxial, orientation-patterned GaAs films

Cited by 10 publications

References 6 publications

Wafer-fused orientation-patterned GaAs

Wafer-fused orientation-patterned GaAs

Development of an automated diode-laser-based multicomponent gas sensor

Mid‐IR by Nonlinear Optical Frequency Conversion

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