Quasi-monocrystalline silicon for thin-film devices

Rinke, Titus J.; Bergmann, Ralf B.; Werner, Jérémie

doi:10.1007/s003390050964

Cited by 48 publications

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“…The enhanced optical absorption in thin silicon with nanovoids has already been reported experimentally [1][2][3][4] and also theoretically [1,5,6]. However, little work has been done on the electrical behaviour of thin silicon layers with nanovoids, though there has been reported work on computing the effective carrier density of other materials [7,8].…”

Section: Introductionmentioning

confidence: 89%

“…For the fabrication of the QMPS layer, porous silicon film is formed by electrochemical etching of (100) p-type silicon wafer with resistivity ρ ranging from 0.01 to 0.05 cm in an electrolyte containing 48% hydrofluoric acid, water and ethanol (1:1:2) [2,[9][10][11]. In this case, a low porosity thick layer is fabricated upon a high porosity thin layer.…”

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

“…A sudden increase of the current density to a moderately high value (∼60-100 mA cm −2 ) for a few seconds creates a very thin (sub-µm) buried layer of higher porosity ( 50%) between the thick low porosity layer and the substrate. The double porous layer is finally annealed at high temperature from 900 to 1100 • C for times between 30 and 120 min in high vacuum [2,3] or hydrogen ambient [9][10][11]. The low porosity layer is then transformed into a monocrystalline layer termed QMS [2,3] or QMPS [5,6] that can itself act as a device layer or may be used as a seed layer for growing a silicon epitaxy layer over it.…”

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

“…Although a quasimonocrystalline porous silicon (QMPS) layer [2][3][4][5] is taken here for a detailed case study, this methodology is suitable for any semiconductor film with a distribution of nanosized voids 3 Author to whom any correspondence should be addressed. in its bulk.…”

Section: Introductionmentioning

confidence: 99%

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Weighted estimates for tangential boundary behaviour

Krotov¹,

Smovzh²

2006

Sb. Math.

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Thin nanocrystalline silicon layers with nanovoids exhibit enhanced optical absorption in the visible spectrum but their resistivity is usually too high for many device applications. To understand the electrical transport properties of nanocrystalline silicon with nanovoids, a simple model of carrier density based on the existence of void-silicon interface states is developed in this paper. Average carrier density as a function of doping concentration of the starting material, void radius, porosity and void-silicon interface state density of the film is computed using this model. The effect of band gap enhancement due to quantum confinement of the carriers in the nanocrystallites as well as the effect of dopant spacing has been incorporated in this model. It has been shown that reasonably high average carrier density (close to the bulk) is achievable by carefully controlling the bulk doping concentration, void radius, void-Si interface state density and porosity of the nanovoid film to some specific values. This modelling appears to be applicable for predicting the electrical behaviour of any thin semiconductor film having a distribution of nanovoids.

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Section: Introductionmentioning

confidence: 89%

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Weighted estimates for tangential boundary behaviour

Krotov¹,

Smovzh²

2006

Sb. Math.

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“…Flexible monocrystalline silicon cells from a layer transfer process [25][26][27] offer a high η = 14.6 % [17]. Important to note, that well optimized monocrystalline silicon cells [28] outperform a-Si cells over most of the medium-to-low light range, due to their higher efficiency and almost perfect diode quality factor.…”

Section: Introductionmentioning

confidence: 99%

Flexible solar cells and modules

Schubert

Merz

2009

Philosophical Magazine

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Perspectives of crystalline Si thin film solar cells: a new era of thin monocrystalline Si films?

Bergmann

Rinke

2000

Prog. Photovolt: Res. Appl.

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A large number of competing approaches are currently being investigated around the world to develop crystalline silicon thin film solar cells on foreign substrates. These approaches can be broadly classified according to the crystalline state of the Si films employed: (i) thin film solar cells based on nano‐ or microcrystalline Si‐films; (ii) cells fabricated from large‐grained polycrystalline Si and (iii) recent approaches utilizing the transfer of monocrystalline Si films. The paper discusses prospects and limitations of these approaches and describes device results based on the transfer of quasi‐monocrystalline Si films. Using Si absorber films epitaxially grown on quasi‐monocrystalline Si, we achieve a conversion efficiency of 13˙6% for a 4 cm2 sized thin film solar cell on glass. In contrast to the limited performance of polycrystalline Si thin film solar cells imposed by the presence of grain boundaries, transfer approaches are expected to result in thin film solar cell efficiencies in the range of 15 – 18% depending on process maturity and complexity. The transfer of monocrystalline Si films therefore opens a new avenue to an efficient and competitive Si‐based thin film technology. Copyright © 2000 John Wiley & Sons, Ltd

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Quasi-monocrystalline silicon for thin-film devices

Cited by 48 publications

References 0 publications

Weighted estimates for tangential boundary behaviour

Weighted estimates for tangential boundary behaviour

Flexible solar cells and modules

Perspectives of crystalline Si thin film solar cells: a new era of thin monocrystalline Si films?

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