Quasi-2D high mobility channel E-mode β-Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V
Xi-Chen Wang,
Xiao-Li Lu,
Yun-Long He
et al.
Abstract:In this Letter, an enhancement mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) with quasi-two-dimensional channel was reported, and the channel mobility of 147.5 cm2/(V·s) is achieved. Low damage etching technology and low Ohmic contact resistance technology are introduced. As a result, the E-mode transistor demonstrates a maximum drain to source current (ID) of 230.5 mA/mm, a peak transconductance (Gm) of 54.2 mS/mm, a current gain cut-off frequency (fT) of 18 GHz, and a power… Show more
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