Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold Wall Chemical Vapor Deposition Reactor

Otani, Mana; Takahashi, Tomoko; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin‐ichi; Hara, Shiro

doi:10.4236/aces.2020.103014

Cited by 3 publications

(6 citation statements)

References 19 publications

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“…Another single-source precursor recently used is the hexamethyldisilane (HMDS, Si 2 C 6 H 18 ) [ 32 ]. As dual-source precursors are used in APCVD, we can cite the mixture of propane (C 3 H 8 ) and silane (SiH 4 ) [ 33 ] or dichlorosilane (DCS, SiH 2 Cl 2 ) and trichlorosilane (HCl 3 Si) [ 34 ]. For both cases, a high-purity hydrogen and argon mixture is used as a carrier gas [ 30 ].…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

“…SiC growth rates reported in this kind of CVD reactor are of up to several μm/min [ 33 , 34 ], with the possibility of performing the film doping process with materials of type n or p [ 34 ]. We can cite as n-type material used in APCVD SiC as the nitrogen [ 36 ] and as p-type material as the boron [ 30 ].…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

“…The low-temperature deposition is very important from the point of view of recent device integration. APCVD SiC films have high deposition rates, crystallinity, and stoichiometry [ 33 , 34 ], but uniformity control is not good, since it is a process controlled by mass transport. Both LPCVD and PECVD are performed at low pressure, a fact that allows better control of the uniformity of the SiC film.…”

Section: Cvd-based Sic Requirements For Development Of Mems/nems Dmentioning

confidence: 99%

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Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Cvd-based Sic Requirements For Development Of Mems/nems Dmentioning

confidence: 99%

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Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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“…The boron trichloride gas has thus been studied for the formation of the boron-doped silicon film and the boron-silicon alloy film [6] [18]. While a previous study used the horizontal cold wall CVD reactor, the slim vertical cold wall reactor [15] [16] [17] [19] [20] was employed for the CVD of the Minimal Fab.…”

Section: Introductionmentioning

confidence: 99%

“…The slim vertical reactor is expected to achieve the high-speed fabrication of electronic devices on the half-inch-diameter wafer based on its quick gas transport [20]. Because the gas flow in the slim vertical gas channel is influenced by the density and viscosity of the gas [20], the gas flow condition should be evaluated before employing a new precursor, such as the boron trichloride. For evaluating the gas flow condition, the in-situ real-time measurement by a quartz crystal microbalance (QCM) [20] [21] [22] provides the effective information in detail.…”

Section: Introductionmentioning

confidence: 99%

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Kamochi¹,

Motomiya²,

Habuka³

et al. 2023

ACES

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A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900˚C in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 -20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% -80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

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Antimicrobial properties of SiC nanostructures and coatings

Chiappim

Pessoa

Fraga

2022

Silicon Carbide Technology for Advanced Human Healthcare Applications

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Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold Wall Chemical Vapor Deposition Reactor

Cited by 3 publications

References 19 publications

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Antimicrobial properties of SiC nanostructures and coatings

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