Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

Sbruev, I. S.; Sbruev, S. B.

doi:10.1134/s1063782610100131

Cited by 1 publication

(2 citation statements)

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“…As shown in Figure (e), the band-edge emission at 390 nm and the broad-band emission ranging from 450 to 650 nm are found in the perfect n -type 4H-SiC [(100)] sample and the SF region. Similar to previous research, the broad-band emission is attributed to oxygen complexes in 4H-SiC. − In addition, the emission band centered at 426 nm appears on the PL spectra of the SF region, which is the same as the band-edge emission of 6H-SiC. , The intensity mapping of the PL peak located at 426 nm is carried out across several horizontal-ridge SFs. As shown in Figure (f), all SFs have a higher PL intensity at 426 nm, indicating that the SFs revealed by the PCE in this work have the Si–C stacking sequence of (3,3).…”

Section: Resultsmentioning

confidence: 92%

“…26−29 In addition, the emission band centered at 426 nm appears on the PL spectra of the SF region, which is the same as the bandedge emission of 6H-SiC. 30,31 The intensity mapping of the PL peak located at 426 nm is carried out across several horizontalridge SFs. As shown in Figure 3(f), all SFs have a higher PL intensity at 426 nm, indicating that the SFs revealed by the PCE in this work have the Si−C stacking sequence of (3,3).…”

Section: Characterizationmentioning

confidence: 99%

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Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

et al. 2023

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The generation and expansion of stacking faults (SFs) during the physical-vapor-transport (PVT) growth of n-type 4H-SiC single-crystal boules are investigated by combining photochemical etching, transmission electron microscopy, microphotoluminescence, and micro-Raman investigations. SFs with the Si−C bilayer stacking sequence of (3,3) in Zhdanov's notation are found near the seed crystal of the n-type 4H-SiC. Interestingly, we find that the facet region of the n-type 4H-SiC single-crystal boule is free of SFs (3,3). Most of the SFs (3,3) are constrained in the nonfaceted region of n-type 4H-SiC. Micro-Raman analysis indicates that the shear stress exerted in the nonfacet region gives rise to the formation and expansion of SFs (3,3), which releases the shear stress during the PVT growth of n-type 4H-SiC single-crystal boules. Due to the differences of nitrogen concentrations and growth velocities between the facet and nonfacet regions of the n-type 4H-SiC single-crystal boule, high compressive stress appears in the interface of the facet and nonfacet regions, which impedes the expansion of SFs (3,3). Furthermore, the shear stress in the facet region of a PVT-grown n-type 4H-SiC single-crystal boule is nearly zero, which eliminates the generation and expansion of SFs in the 4H-SiC single-crystal boule.

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