Quantum Well States and Oscillatory Magnetic Anisotropy in Ultrathin Fe Films

Li, J; Chen, Gang; Wu, Y. Z.; Rotenberg, Eli; Przybylski, M.

doi:10.1109/tmag.2011.2108273

Cited by 11 publications

(6 citation statements)

References 45 publications

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“…Nevertheless, either I or P direction could be regarded as a tilted in-plane direction. Such oscillation is, most likely, resulted from a confined quantum well state formed between top and bottom layers [70,71] as reported in Co few-layers [72]. The bandstructure of the bilayer shows a metallic feature, but the EF is slightly shifted by ~0.1 eV ( Fig.…”

Section: Manipulation Of Magnetic Ordering By Additional Crs2 Layersmentioning

confidence: 52%

Layer and doping tunable ferromagnetic order in two-dimensional CrS2 layers

et al. 2018

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Interlayer coupling is of vital importance for manipulating physical properties, e.g. electronic bandgap, in two-dimensional materials. However, tuning magnetic properties in these materials is yet to be addressed. Here, we found the in-plane magnetic orders of CrS2 mono-and few-layers are tunable between striped antiferromagnetic (sAFM) and ferromagnetic (FM) orders by manipulating charge transfer between Cr t2g and eg orbitals. Such charge transfer is realizable through interlayer coupling, direct charge doping or substituting S with Cl atoms. In particular, the transferred charge effectively reduces a portion of Cr 4+ to Cr 3+ , which, together with delocalized S p orbitals and their resulting direct S-S interlayer hopping, enhances the double-exchange mechanism favoring the FM rather than sAFM order. An exceptional interlayer spin-exchange parameter was revealed over -10 meV, an order of magnitude stronger than available results of interlayer magnetic coupling. It addition, the charge doping could tune CrS2 between p-and n-doped magnetic semiconductors. Given these results, several prototype devices were proposed for manipulating magnetic orders using external electric fields or mechanical motion. These results manifest the role of interlayer coupling in modifying magnetic properties of layered materials and shed considerable light on manipulating magnetism in these materials.

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Section: Manipulation Of Magnetic Ordering By Additional Crs2 Layersmentioning

confidence: 52%

Layer and doping tunable ferromagnetic order in two-dimensional CrS2 layers

et al. 2018

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“…Since the QWS energy levels cross E F periodically as a function of film thickness [13,17], oscillatory magnetic anisotropy can result if these states couple to and modulate the occupation of the 3d states responsible for generating the MAE. Recently, strong oscillations of * ubauer@mit.edu in-plane step-induced anisotropy in Fe films grown on vicinal substrates have been observed and attributed to minority spin d-band QWS confined within the Fe film [13,14,18]. These oscillations occurred with a period of ß6 ML [13][14][15] and had a significant amplitude even at Fe thicknesses d Fe > 30 ML [13,15].…”

Section: Introductionmentioning

confidence: 99%

Voltage control of magnetic anisotropy in Fe films with quantum well states

2014

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The influence of a gate voltage on magnetic anisotropy is investigated in a thin Fe film epitaxially grown on a Ag(1,1,10) substrate and covered by MgO. Oscillations in step-induced magnetic anisotropy due to quantum well states (QWS) confined in the Fe film are observed and shown to persist up to room temperature at low Fe thicknesses. By systematically examining the voltage and thickness dependence of the magnetic hysteresis loop characteristics, we identify two distinct effects by which an applied voltage modifies the magnetic anisotropy. The first effect is due to voltage-induced changes to interfacial perpendicular magnetic anisotropy which, due to the vicinal geometry, leads to changes in the effective in-plane uniaxial magnetic anisotropy. A second effect is observed at lower film thicknesses and shows nonmonotonic voltage-induced effects on magnetic anisotropy. This nonmonotonic behavior coincides with the onset of significant QWS-induced effects on magnetic anisotropy and suggests a link between QWS-and voltage-induced anisotropy changes.

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“…Although a mutual relation between oscillatory photoemission intensity and shift field H s appears straightforward, we cannot completely exclude the possibility that a band with other spatial symmetry contributes to the oscillatory magnetic anisotropy [31]. It is, therefore, desirable to explore the microscopic mechanism of the magnetic anisotropy oscillations in more detail.…”

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confidence: 98%

Oscillations of the Orbital Magnetic Moment due tod-Band Quantum Well States

et al. 2014

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The effect of electron confinement on the magnetocrystalline anisotropy of ultrathin bcc Fe films is explored by combining photoemission spectroscopy, x-ray magnetic circular dichroism, and magneto-optical Kerr effect measurements. Pronounced thickness-dependent variations in the magnetocrystalline anisotropy are ascribed to periodic changes in the density of states at the Fermi level, induced by quantization of d(xz), d(yz) out-of-plane orbitals. Our results reveal a direct correlation between quantum well states, the orbital magnetic moment, and the magnetocrystalline anisotropy.

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Quantum Well States and Oscillatory Magnetic Anisotropy in Ultrathin Fe Films

Cited by 11 publications

References 45 publications

Layer and doping tunable ferromagnetic order in two-dimensional CrS2 layers

Layer and doping tunable ferromagnetic order in two-dimensional CrS2 layers

Voltage control of magnetic anisotropy in Fe films with quantum well states

Oscillations of the Orbital Magnetic Moment due tod-Band Quantum Well States

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