Quantum well infrared photodetector research and development at Jet Propulsion Laboratory

Gunapala, Sarath D.; Bandara, S. V.; Liu, John K.; Hong, Winn; Luong, Edward M.; Mumolo, Jason M.; McKelvey, M. J.; Sengupta, D. K.; Singh, Anjali; Shott, C. A.; Carralejo, R.; Maker, P. D.; Bock, J. J.; Ressler, Michael E.; Werner, M. W.

doi:10.1117/12.317606

Cited by 16 publications

(16 citation statements)

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“…Sensitivity of DWELL QDIPs can be evaluated by measuring parameters such as absolute spectral responsitivity R(k), absorption quantum efficiency (internal) g, photocurrent (I P ), dark current I D , noise current i n , and specific detectivity (D * ). Similar to other intersubband photodetectors, these parameters are linked each other through the photoconductive gain (g) of the detector, R ¼ egg=ðhc=kÞ; [15,16]. Here, e is the electron charge, Df is the bandwidth, A is the detector area, and hc/k is the photoexcitation energy.…”

Section: Dwell Qdip Absorption Quantum Efficiencymentioning

confidence: 99%

“…When the detector operates in background limited conditions (I P ) I D ), since I P is proportional to gain, D * depends only on the absorption quantum efficiency g, regardless of the size of the photoconductive gain. Therefore, improving absorption quantum efficiency is the key to improving the ultimate performance of these detectors [15,16]. Fig.…”

Section: Dwell Qdip Absorption Quantum Efficiencymentioning

confidence: 99%

“…Thus, thinning has played an extremely important role in the fabrication of large area FPA hybrids. Elimination of thermal mismatch is a process of paramount importance in achieving high-quality, large area arrays without pixel delamination [15]. Typically, twelve 640 · 512 detector arrays can be processed from a single 3 in.…”

Section: Focal Plane Array Fabricationmentioning

confidence: 99%

“…It is designed to be transparent in the 8-12 lm wavelength range to be compatible with the QDIP's 8-9 lm operation. The digital data acquisition resolution of the camera is 14-bits, which determines the instantaneous dynamic range of the camera (i.e., 16,384) [15,16].…”

Section: Focal Plane Array Cameramentioning

confidence: 99%

See 3 more Smart Citations

Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

Gunapala

Bandara

Hill

et al. 2007

Infrared Physics & Technology

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Section: Dwell Qdip Absorption Quantum Efficiencymentioning

confidence: 99%

Section: Dwell Qdip Absorption Quantum Efficiencymentioning

confidence: 99%

Section: Focal Plane Array Fabricationmentioning

confidence: 99%

Section: Focal Plane Array Cameramentioning

confidence: 99%

See 2 more Smart Citations

Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

Gunapala

Bandara

Hill

et al. 2007

Infrared Physics & Technology

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“…The molecular beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) techniques can achieve high uniformity of semiconductor parameters across the entire GaAs/AlGaAs QWIP wafers, which allows for large FPAs of QWIPs with low spatial (fixed) pattern noise, low cost, thermal stability and the use of standard manufacturing techniques based on mature GaAs processing technologies. Even though QWIP is a photoconductor, its several properties such as high impedance, fast response time, a better NEDT and low power consumption well comply with the requirements of VWIR large FPAs fabrication [1][2][3][4][5] . This paper presents a 256×1 linear array multiple QWIP FPA design, processing and characterization.…”

mentioning

confidence: 99%

The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays

Guo

Xiong

et al. 2008

Sci. China Ser. G-Phys. Mech. Astron.

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The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λ P = 14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at V B = 3 V and T = 45 K has the responsibility 4.28×10 −2 (A/W), the blackbody detectivity D b * = 5.14×10 9 (cm·Hz 1/2 /W), and the peak detectivity D λ * = 4.24× 10 10 (cm⋅Hz 1/2 /W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA N ef of 99.2%, the average responsibility R (V/W) of 3.48×10 6 (V/W), the average peak detectivity D λ * of 8.29×10 9 (cm·Hz 1/2 /W), and the non-uniformity U R of 5.83%. This device is ready for the thermal image application. quantum well, focal plane arrays, very long wavelength, infrared detector, diffraction gratingThe IR imaging systems that operate in the very long wavelength IR (VWIR) region are required in the space detection applications due to their correlation with the CO 2 absorption band. The square quantum wells are designed in such a way that the energy separation between the first excited state and ground state matches the energy of the infrared photons to be detected, which can cover the response wavelength from 3 to 18 µm for quantum well infrared photoconductor (QWIP). Both HgCdTe photodiodes and QWIPs have demonstrated the capability in the LWIR range. The performance figures of merit of state-of-the-art for QWIP and HgCdTe FPAs are similar because the main limitations come from the readout circuits. However, the HgCdTe process yield is low for

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Photodetectors

Wadsworth¹

2001

Kirk-Othmer Encyclopedia of Chemical Technology

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Photodetectors, based on photon absorption or thermal emission, are made from semiconductor materials that are very sensitive in the spectral range from ultraviolet to far infrared. Detector figures of merit such as responsivity, noise, noise equivalent power and detectivity, and ideal performance and cooling requirements are given. Modes of operation include charge‐coupled device, photovoltaic diode, photoconductor, and bolometer. Most semiconductor detectors operate as photon detectors where the minimum photon energy detected is defined by a discrete activation energy of the semiconductor. However micromachined bolometers are in development for thermal imaging and chemical spectroscopy. Materials and detector types are discussed. Detector material preparation technologies are presented for intrinsic detectors where the photon absorption coefficient is high, and for the low absorption coefficient detectors such as impurity‐doped Ge or Si. Fabrication technology making possible large photodetector focal planes that detect photons and perform signal processing are integrated structures either in monolithic form or in hybrid form. The monolithic arrays range up to 10 6 detectors. The hybrid focal planes, mostly for infrared detection, contain up to 10 5 . Photodetector arrays have been developed for imaging across the spectrum and are used in CCD cameras, chemical spectroscopy, missile seekers, and night vision equipment.

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Quantum well infrared photodetector research and development at Jet Propulsion Laboratory

Cited by 16 publications

References 0 publications

Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays

Photodetectors

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