Quantum transport of short-gate MOSFETs based on monolayer MoSi₂N₄

Abstract

The high carrier mobility, appropriate band gap and good environmental stability of two-dimensions (2D) MoSi2N4 make it possible to be an appropriate channel material for transistors with excellent performances. Therefore,...

Emerging Versatile Two‐Dimensional MoSi2N4 Family

“…Semiconductors in 2D MA 2 Z 4 family have atomicscale thick ness, ambient stability, suitable bandgap and excellent elec tronic mobilities, indicating that this family could be promising candidates for the newgeneration miniaturized fieldeffect tran sistors (FETs). [177][178][179][180][181] Doublegate metaloxidesemiconductor FET (DG MOSFET) based on monolayer MoSi 2 N 4 has been designed and investigated. [177,178] This kind of FET has advan tages of high operating frequency, good gain controllability and low feedback capacitance.…”

Modulating the electronic properties and band alignments of the arsenene/MoSi2N4 van der Waals heterostructure via applying strain and electric field

“…18,19 Recent theoretical studies predicate that the MoSi 2 N 4 monolayer can serve as a photocatalyst for water splitting. 20,21 The MoSi 2 N 4 monolayer has large intrinsic carrier mobility, 22 excellent mechanical and transport properties, 23,24 and thermal stability, 25 which promote research interest relevant to the layered MA 2 Z 4 materials. 26 The arsenene monolayer also has hexagonal lattice structure and excellent stability.…”

Combined Machine Learning and High-Throughput Calculations Predict Heyd–Scuseria–Ernzerhof Band Gap of 2D Materials and Potential MoSi2N4 Heterostructures

“…Ye et al calculated the efficiency of double-gate metal oxide semiconductor field-effect transistors (MOSFETs) employing monolayer MoSi 2 N 4 as the foundation. The findings unveiled monolayer MoSi 2 N 4 as a compelling alternative for transistor channel materials in the postsilicon epoch . Optical analysis indicates that the monolayer MoSi 2 N 4 stands as a promising contender in the realm of photocatalysis, particularly for facilitating the evolution of H 2 O and CO 2 reduction .…”

“…The findings unveiled monolayer MoSi 2 N 4 as a compelling alternative for transistor channel materials in the postsilicon epoch. 7 Optical analysis indicates that the monolayer MoSi 2 N 4 stands as a promising contender in the realm of photocatalysis, particularly for facilitating the evolution of H 2 O 8 and CO 2 reduction. 9 Wang et al presented an intercalation approach to construct a septuple atomic layer MA 2 Z 4 monolayer, and these systems show many unusual electronic properties.…”