2008
DOI: 10.1016/j.physc.2008.04.014
|View full text |Cite
|
Sign up to set email alerts
|

Quantum transport of injected electrons in an asymmetric FM/I1/SC/I2/FM junction: Directional dependence

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2013
2013
2014
2014

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 37 publications
(43 reference statements)
0
1
0
Order By: Relevance
“…Thus, with the existing capability to create hybrid structures involving FM and SC graphene, researchers are now seeking breakthroughs involving graphenebased low temperature spintronic devices. The effectiveness of a graphene spin valve or switch involving both ferromagnet (F) and superconductor (S) elements in contact is based on proximity effects, which dictate the behavior of both the singlet and triplet pairing correlations in each region [6][7][8][9][10][11]. In graphene, as opposed to most conventional materials, the Fermi level can be tuned via a gate potential.…”
mentioning
confidence: 99%
“…Thus, with the existing capability to create hybrid structures involving FM and SC graphene, researchers are now seeking breakthroughs involving graphenebased low temperature spintronic devices. The effectiveness of a graphene spin valve or switch involving both ferromagnet (F) and superconductor (S) elements in contact is based on proximity effects, which dictate the behavior of both the singlet and triplet pairing correlations in each region [6][7][8][9][10][11]. In graphene, as opposed to most conventional materials, the Fermi level can be tuned via a gate potential.…”
mentioning
confidence: 99%