Quantum transport in neutron-irradiated modulation-doped heterojunctions. II. Thermal neutrons

Jin, Wei-min; Zhou, Jing; Huang, Yi; Cai, Lihong

doi:10.1103/physrevb.38.13090

Cited by 4 publications

(1 citation statement)

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“…However, most of these have only addressed problems in the bulk materials. Recently, some of the authors [3,4] have shown that there appear to be a large number of defects, such as the antisite AsGa, in Si-Al,Ga, -.As/GaAs modulation-doped heterojunction materials bombarded by fast and thermal neutrons. Therefore, it is interested to give a more detailed study on the local environment around these defects in AlAsJGaAs superlattices, which will yield new information on the character of the transport in such multilayer systems.…”

Section: Introductionmentioning

confidence: 99%

Antisite Defects in SiAlAs/GaAs Modulation‐Doped Superlattices

Wang

Zhang

Wang

et al. 1990

Physica Status Solidi (b)

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The electronic structure and binding energy of the antisite defects GaA, and AsGa in Si-AlAs/GaAs modulation-doped superlattices are calculated with use of the developed recursion technique. A detailed comparison between the antisites and impurities in the multilayer systems is presented based on the discussion of the local density of states and the electronic occupation possibilities on each defect site. The results are used to explain recent experiments.Die Elektronenstruktur und Bindungsenergie der Antiplatzdefekte GaA, und AS, , in modulationsdotierten Si-A1 As/GaAs-Supergittern werden mittels einer dazu entwickelten Rekursionsmethode berechnet. Ein ausfiihrlicher Vergleich zwischen den Antiplatzdefekten und Verunreinigungsstorstellen in dem Vielschichtsystem wird beziiglich der Diskussion der lokalen Zustandsdichte und der elektronischen Besetzungsmoglichkeiten aller Defektplatze durchgefiihrt. Die Ergebnisse werden benutzt, um neuere Experimente zu erklaren.

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Section: Introductionmentioning

confidence: 99%