Quantum transport in a single molecular transistor at finite temperature

Kalla, Manasa; Chebrolu, Narasimha Raju; Chatterjee, Ashok

doi:10.1038/s41598-021-89436-5

Cited by 9 publications

(7 citation statements)

References 35 publications

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“…In recent work, we have investigated the magneto-transport properties 32 of an SMT system and explained that it can be used as a spin-filtering device at zero temperature. We have also shown the effect of e–p interaction on the transport properties at finite temperature in 33 .…”

Section: Introductionmentioning

confidence: 73%

Transient dynamics of a single molecular transistor in the presence of local electron–phonon and electron–electron interactions and quantum dissipation

Kalla

Chebrolu

Chatterjee

2022

Sci Rep

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We consider a single molecular transistor in which a quantum dot with local electron–electron and electron–phonon interactions is coupled to two metallic leads, one of which acts like a source and the other like a drain. The system is modeled by the Anderson-Holstein (AH) model. The quantum dot is mounted on a substrate that acts as a heat bath. Its phonons interact with the quantum dot phonons by the Caldeira–Leggett interaction giving rise to dissipation in the dynamics of the quantum dot system. A simple canonical transformation exactly treats the interaction of the quantum dot phonons with the substrate phonons. The electron–phonon interaction of the quantum dot is eliminated by the celebrated Lang-Firsov transformation. The time-dependent current is finally calculated by the Keldysh Green function technique with various types of bias. The transient-time phase diagram is analysed as a function of the system parameters to explore regions that can be used for fast switching in devices like nanomolecular switches.

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Section: Introductionmentioning

confidence: 73%

Transient dynamics of a single molecular transistor in the presence of local electron–phonon and electron–electron interactions and quantum dissipation

Kalla

Chebrolu

Chatterjee

2022

Sci Rep

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“…Some experimental studies 45 , 46 have shown that temperature can also play a significant role on the non-equilibrium transport. Kalla et al have theoretically analysed the effect of temperature between the source and the drain in an SMT system 47 . Very recently, Kalla et al have studied the transient dynamics in a dissipative SMT with e–p and e–e interaction 48 .…”

Section: Introductionmentioning

confidence: 99%

Rashba effect on finite temperature magnetotransport in a dissipative quantum dot transistor with electronic and polaronic interactions

Bhattacharyya

Debnath

Chatterjee

2023

Sci Rep

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The Rashba spin–orbit coupling induced quantum transport through a quantum dot embedded in a two-arm quantum loop of a quantum dot transistor is studied at finite temperature in the presence of electron–phonon and Hubbard interactions, an external magnetic field and quantum dissipation. The Anderson-Holstein-Caldeira-Leggett-Rashba model is used to describe the system and several unitary transformations are employed to decouple some of the interactions and the transport properties are calculated using the Keldysh technique. It is shown that the Rashba coupling alone separates the spin-up and spin-down currents causing zero-field spin-polarization. The gap between the up and down-spin currents and conductances can be changed by tuning the Rashba strength. In the absence of a field, the spin-up and spin-down currents show an opposite behaviour with respect to spin–orbit interaction phase. The spin-polarization increases with increasing electron–phonon interaction at zero magnetic field. In the presence of a magnetic field, the tunneling conductance and spin-polarization change differently with the polaronic interaction, spin–orbit interaction and dissipation in different temperature regimes. This study predicts that for a given Rashba strength and magnetic field, the maximum spin-polarization in a quantum dot based device occurs at zero temperature.

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Section: Introductionmentioning

confidence: 99%

“…2,14 Over the past two decades, the success of the SMJ techniques has led to impressive progress in understanding how the structure of a single molecule determines its electrical conductance. Insights from these studies have inspired the design and fabrication of single-molecule rectifiers, [15][16][17][18][19][20][21][22][23] transistors, [24][25][26][27][28] and switches. [29][30][31][32][33][34][35] As the field proceeds to explore more complex molecular structures and junction architectures and interfaces with other disciplines, researchers have started to fully unveil the hidden potential of SMJs in serving as a fertile single-molecule platform for probing physical, chemical, and biological phenomena beyond electrical conductance.…”

Section: Introductionmentioning

confidence: 99%

Beyond electrical conductance: progress and prospects in single-molecule junctions

2022

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Quantum transport in a single molecular transistor at finite temperature

Cited by 9 publications

References 35 publications

Transient dynamics of a single molecular transistor in the presence of local electron–phonon and electron–electron interactions and quantum dissipation

Transient dynamics of a single molecular transistor in the presence of local electron–phonon and electron–electron interactions and quantum dissipation

Rashba effect on finite temperature magnetotransport in a dissipative quantum dot transistor with electronic and polaronic interactions

Beyond electrical conductance: progress and prospects in single-molecule junctions

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