Quantum technologies with optically interfaced solid-state spins

Awschalom, D. D.; Hanson, Ronald K.; Wrachtrup, Jörg; Zhou, Brian B.

doi:10.1038/s41566-018-0232-2

Cited by 737 publications

(634 citation statements)

References 160 publications

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“…[] where a comprehensive summary of recent efforts on NV − centers in diamond, color centers in SiC, and quantum dots in van der Waals materials is given. In addition, recent review by Awschalom et al . presents an extensive coverage of spin properties of various solid‐sate systems, including NV − center, divacancy and silicon‐vacancy defects in SiC, rare‐earth ions in solids, and optically active donors in silicon, which are out of scope of the current work.…”

Section: Introductionmentioning

confidence: 99%

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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One ultimate goal of quantum information processing is to construct a quantum network for direct sharing of quantum information between distant parties based on stationary qubits for information storage and flying qubits for information transmission. This requires long‐lived quantum memories, efficient light–matter interface, and deterministic quantum gate operations. Among matter qubits, the electron spin of nitrogen vacancy center in diamond is an appealing option for its long coherence time at room temperature, deterministic microwave control, and optical preparation and readout of the qubit. However, its poor optical properties, including weak zero‐phonon‐line emission and large spectral diffusion, limit its potential for large‐scale deployment in quantum nodes. This has motivated the investigation for alternative quantum emitters that combine long‐time memory and coherent optical properties together. The emerging group‐IV split‐vacancy color centers in diamond, such as silicon‐vacancy, germanium‐vacancy, tin‐vacancy, and lead‐vacancy centers, are promising candidates of this ongoing exploration. These quantum emitters simultaneously possess microsecond spin coherence time and optically bright transitions with narrow linewidths. This review reports recent efforts on extending the spin coherence time of these color centers via temperature, strain, and charge control, which paves the road towards constructing solid‐based matter–photon interface for quantum network applications.

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Section: Introductionmentioning

confidence: 99%

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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“…A comprehensive discussion on diamond spins and their entanglement to photons for quantum computing and quantum networks can be found in two excellent review articles (see ref. []).…”

Section: Single‐photon Emitters In Diamondmentioning

confidence: 99%

Diamond as a Platform for Integrated Quantum Photonics

Lenzini¹,

Gruhler²,

Walter³

et al. 2018

Adv Quantum Tech

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Integrated quantum photonics enables the generation, manipulation, and detection of quantum states of light in miniaturized waveguide circuits. Implementation of these three operations in a single integrated platform is a crucial step toward a fully scalable approach to quantum photonic technologies. In this context, diamond has emerged as a particularly promising material as it naturally combines a large transparency range for the fabrication of low‐loss photonic circuits, and a variety of optically active defects for the realization of efficient single‐photon emitters. Furthermore, its high Young's modulus makes it ideal for the implementation of tunable optomechanical devices for active quantum state manipulation. This review reports recent progress on the realization of the main components required for a diamond‐based integrated quantum photonic architecture: single‐photon emitters, static and actively tunable waveguide circuits, and, as a last building block, integrated superconducting single‐photon detectors.

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“…A comparison of the spin-photon interface in various solid-state platforms is shown in figure 1(C), where the above criteria for the quantum emitters are shown such us, emission region of zero phonon lines (ZPLs), spin coherence time and available ancilla qubits. For more details on the comparative properties of these and other platforms, the reader should refer to [26,28].…”

Section: Background and Introductionmentioning

confidence: 99%

“…Currently spin-photon interconnects are at the core of novel nanophotonic, nanoelectronics and spintronics architectures, used to transfer the information of electrons' spin to photons within an optical circuit. An immediate application of spin-photon interconnects is the establishment of integrated and on-chip novel sensing and imaging platforms at the micro and nanoscale, while a long-term application relies on the development of a quantum networks.Recent reviews have identified some prominent and emerging semiconductor materials for spin-photon interconnects, including spin defects in diamond, SiC, rare-earth ions in solids, and novel 2D quantum materials [26,28]. Here, the projected evaluation is focused only on criteria that encompass the availability of single-photon emission, long electron spin coherence time and electron spin coupling with nearby nuclear spins in a scalable platform.…”

mentioning

confidence: 99%

“…Recent reviews have identified some prominent and emerging semiconductor materials for spin-photon interconnects, including spin defects in diamond, SiC, rare-earth ions in solids, and novel 2D quantum materials [26,28]. Here, the projected evaluation is focused only on criteria that encompass the availability of single-photon emission, long electron spin coherence time and electron spin coupling with nearby nuclear spins in a scalable platform.…”

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confidence: 99%

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Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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Quantum technologies with optically interfaced solid-state spins

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Cited by 737 publications

References 160 publications

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Diamond as a Platform for Integrated Quantum Photonics

Silicon carbide color centers for quantum applications

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