Quantum spin Hall state in monolayer 1T<sup>′</sup>-TMDCs

Li, Zhuojun; Song, Yekai; Tang, Shujie

doi:10.1088/1361-648x/ab8660

Cited by 20 publications

(29 citation statements)

References 120 publications

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“…[166] Preliminary phase boundary engineering has already been demonstrated in 1T ′/1H WSe 2 [171] and in other MX 2 materials. [172] A recent review by Li et al [173] provides a comprehensive summary of 1T ′-MX 2 quantum spin Hall properties.…”

Section: T′-phase Transition Metal Dichalcogenides (Tmdcs)mentioning

confidence: 99%

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Atomically Thin Quantum Spin Hall Insulators

et al. 2021

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Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Among them is the quantum spin Hall (QSH) insulator—a 2D state of matter that arises from interplay of topological band inversion and strong spin–orbit coupling, with large tunable bulk bandgaps up to 800 meV and gapless, 1D edge states. Reviewing recent advances in materials science and engineering alongside theoretical description, the QSH materials library is surveyed with focus on the prospects for QSH‐based device applications. In particular, theoretical predictions of nontrivial superconducting pairing in the QSH state toward Majorana‐based topological quantum computing are discussed, which are the next frontier in QSH materials research.

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Section: T′-phase Transition Metal Dichalcogenides (Tmdcs)mentioning

confidence: 99%

“…[ 172 ] A recent review by Li et al. [ 173 ] provides a comprehensive summary of 1 T ′‐MX 2 quantum spin Hall properties.…”

Section: Atomically Thin Qsh Materialsmentioning

confidence: 99%

Atomically Thin Quantum Spin Hall Insulators

et al. 2021

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“…[4][5][6][7][8][9][10][11] Moreover, the quantized conductance in monolayer 1T'-WTe 2 can survive even at 100 K. [8] Benefiting from the weak van der Waals (VdW) interlayer interaction, the 1T'-MX 2 could be further fabricated with other 2D materials into VdW heterostructures to realize many novel quantum phenomena and multifunctional materials. [8,[12][13][14][15] For instance, the TI/superconductor interface can host the Majorana zero mode with application potentials in topological quantum computing; [16][17][18] the TI/magnetic layer heterostructure could realize quantum anomalous Hall effect. [19,20] Most MX 2 monolayers are stable in 2H phase and are topologically trivial semiconductors with a wide bandgap.…”

Section: Doi: 101002/adma202004930mentioning

confidence: 99%

Epitaxial Growth of Single‐Phase 1T'‐WSe₂ Monolayer with Assistance of Enhanced Interface Interaction

Chen

Zong

et al. 2020

Advanced Materials

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The WSe2 monolayer in 1T’ phase is reported to be a large‐gap quantum spin Hall insulator, but is thermodynamically metastable and so far the fabricated samples have always been in the mixed phase of 1T’ and 2H, which has become a bottleneck for further exploration and potential applications of the nontrivial topological properties. Based on first‐principle calculations in this work, it is found that the 1T’ phase could be more stable than 2H phase with enhanced interface interactions. Inspired by this discovery, SrTiO3 (100) is chosen as substrate and WSe2 monolayer is successfully grown in a 100% single 1T’ phase using the molecular beam epitaxial method. Combining in situ scanning tunneling microscopy and angle‐resolved photoemission spectroscopy measurements, it is found that the in‐plane compressive strain in the interface drives the 1T'‐WSe2 into a semimetallic phase. Besides providing a new material platform for topological states, the results show that the interface interaction is a new approach to control both the structure phase stability and the topological band structures of transition metal dichalcogenides.

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“…To further expand the bandgap range, tellurium‐based alloys are needed. For example, WTe 2 is a semimetal, [ 19,20 ] while monolayer WSe 2 is a semiconductor with wide bandgap (≈1.64 eV). [ 21–23 ] The bandgap of ternary alloy WSe 2−2 x Te 2 x can potentially be tunable from 0 to 1.64 eV, covering a broad range of the electromagnetic spectrum from infrared (IR) to visible light.…”

Section: Figurementioning

confidence: 99%

Heterogeneous Electronic and Photonic Devices Based on Monolayer Ternary Telluride Core/Shell Structures

Sharma

Kang

et al. 2020

Advanced Materials

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Device engineering based on the tunable electronic properties of ternary transition metal dichalcogenides has recently gained widespread research interest. In this work, monolayer ternary telluride core/shell structures are synthesized using a one‐step chemical vapor deposition process with rapid cooling. The core region is the tellurium‐rich WSe2−2xTe2x alloy, while the shell is the tellurium‐poor WSe2−2yTe2y alloy. The bandgap of the material is ≈1.45 eV in the core region and ≈1.57 eV in the shell region. The lateral gradient of the bandgap across the monolayer heterostructure allows for the fabrication of heterogeneous transistors and photodetectors. The difference in work function between the core and shell regions leads to a built‐in electric field at the heterojunction. As a result, heterogeneous transistors demonstrate a unidirectional conduction and strong photovoltaic effect. The bandgap gradient and high mobility of the ternary telluride core/shell structures provide a unique material platform for novel electronic and photonic devices.

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Quantum spin Hall state in monolayer 1T^′-TMDCs

Cited by 20 publications

References 120 publications

Atomically Thin Quantum Spin Hall Insulators

Atomically Thin Quantum Spin Hall Insulators

Epitaxial Growth of Single‐Phase 1T'‐WSe₂ Monolayer with Assistance of Enhanced Interface Interaction

Heterogeneous Electronic and Photonic Devices Based on Monolayer Ternary Telluride Core/Shell Structures

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Quantum spin Hall state in monolayer 1T′-TMDCs

Cited by 20 publications

References 120 publications

Atomically Thin Quantum Spin Hall Insulators

Atomically Thin Quantum Spin Hall Insulators

Epitaxial Growth of Single‐Phase 1T'‐WSe2 Monolayer with Assistance of Enhanced Interface Interaction

Heterogeneous Electronic and Photonic Devices Based on Monolayer Ternary Telluride Core/Shell Structures

Contact Info

Product

Resources

About

Quantum spin Hall state in monolayer 1T^′-TMDCs

Epitaxial Growth of Single‐Phase 1T'‐WSe₂ Monolayer with Assistance of Enhanced Interface Interaction