Quantum size effects in n-PbTe∕p-SnTe∕n-PbTe heterostructures

Рогачева, Е. И.; Nashchekina, O. N.; Meriuts, A. V.; Lyubchenko, S.G.; Dresselhaus, M. S.; Dresselhaus, G.

doi:10.1063/1.1862338

Cited by 61 publications

(47 citation statements)

References 20 publications

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“…From the material standpoint, thin films of IV-VI semi-conductors have been grown epitaxially [23][24][25] and extensively studied [34]. In particular, ultrathin SnTe quantum wells have been made with high quality [35][36][37]. Related materials PbTe, PbSe and PbS, while topologically trivial in bulk form, can become inverted in strained thin films [7], which further broadens the material base available for use.…”

Section: Pacs Numbersmentioning

confidence: 99%

Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

et al. 2013

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Three-dimensional topological crystalline insulators were recently predicted and observed in the SnTe class of IV-VI semiconductors, which host metallic surface states protected by crystal symmetries. In this work, we study thin films of these materials and expose their potential for device applications. We demonstrate that thin films of SnTe and Pb1−xSnxSe(Te) grown along the (001) direction are topologically nontrivial in a wide range of film thickness and carry conducting spinfiltered edge states that are protected by the (001) mirror symmetry via a topological invariant. Application of an electric field perpendicular to the film will break the mirror symmetry and generate a band gap in these edge states. This functionality motivates us to propose a novel topological transistor device, in which charge and spin transport are maximally entangled and simultaneously controlled by an electric field. The high on/off operation speed and coupling of spin and charge in such a device may lead to electronic and spintronic applications for topological crystalline insulators. PACS numbers:Crystal structure and symmetry play a fundamental role in determining electronic properties of quantum materials. The interplay between crystallography and electronic topology[1, 2] has advanced our understanding of topological insulators [3][4][5]. More recently, a new type of topological phases termed topological crystalline insulators [6] has been predicted [7] and observed [8][9][10] in three-dimensional materials SnTe and Pb 1−x Sn x Se(Te). A key characteristic of topological crystalline insulators is the presence of metallic boundary states that are protected by crystal symmetry, rather than time-reversal [11]. As a consequence, these states can acquire a band gap under perturbations that break the crystal symmetry [7,12]. This novel property opens up an unprecedented functionality of tuning the charge and spin transport of topological boundary states with high on/off speed by applying an electric field. Here we theoretically demonstrate that thin films of SnTe and Pb 1−x Sn x Se(Te) grown along the (001) direction realize a new, two-dimensional topological crystalline insulator phase that supports spin-filtered edge states with a band gap tunable by electric field effect. Our work may thus enable electronic and spintronic device applications based on topological crystalline insulators.Topological crystalline insulators (TCI) have so far only been realized in three-dimensional materials [7][8][9][10]. In this work, we propose a material realization of a twodimensional (2D) topological crystalline insulator phase, which is topologically distinct from an ordinary insulator in the presence of mirror symmetry about the 2D plane.The topology here is mathematically characterized by two integer topological invariants N + and N − , which are Chern numbers of Bloch states with opposite mirror eigenvalues. While the sum N + + N − determines the quantized Hall conductance, the mirror Chern number [2] defined by N M ≡ (N + − N − )/2 serves as...

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Section: Pacs Numbersmentioning

confidence: 99%

Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

et al. 2013

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“…Since then the field has preserved its freshness to date, expanding its domain to include the study of size effects in conventional metals [3], semiconductors [4], superconductors [5] and, since recently, nanoclusters [6], carbon nanotubes [7] and fullerenes [8]. Recent advances in nanofabrication techniques have made it possible to extend experimental investigation of QSEs in various types of semimetallic structures from two-dimensional (2D) thin films to onedimensional (1D) nanowires [9]- [17]. On the other hand, despite the advances on an experimental front, there is not a theoretical model for quantitative understanding of measured data in such structures.…”

Section: Introductionmentioning

confidence: 99%

Quantum size effects in a one-dimensional semimetal

Farhangfar

2006

Phys. Rev. B

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We study theoretically the quantum size effects in a one-dimensional semimetal by a Boltzmann transport equation. We derive analytic expressions for the electrical conductivity, Hall coefficient, magnetoresistance, and the thermoelectric power in a nanowire. The transport coefficients of semimetal oscillate as the size of the sample shrinks. Below a certain size the semimetal evolves into a semiconductor. The semimetal-semiconductor transition is discussed quantitatively. The results should make a theoretical ground for better understanding of transport phenomena in lowdimensional semimetals. They can also provide useful information while studying low-dimensional semiconductors in general.

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“…2(a) intersects the bulk valence band due to the p-type Sn vacancy as the dominant dopant in SnTe [32][33][34]. It is therefore difficult to access the Dirac point of the topological surface states of SnTe in the ARPES measurement [15,16,18,20].…”

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confidence: 99%

Experimental Observation of Dirac-like Surface States and Topological Phase Transition inPb1−xSnxTe(111)
Yan¹,
Liu
²
,
Zang
³

et al. 2014
Phys. Rev. Lett.
117
7
86
0
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The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb 1−x Sn x Teð111Þ films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb 1−x Sn x Teð111Þ films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.

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Quantum size effects in n-PbTe∕p-SnTe∕n-PbTe heterostructures

Cited by 61 publications

References 20 publications

Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

Quantum size effects in a one-dimensional semimetal

Experimental Observation of Dirac-like Surface States and Topological Phase Transition inPb1−xSnxTe(111)
Yan¹,
Liu
²
,
Zang
³

et al. 2014
Phys. Rev. Lett.
117
7
86
0
View full text Add to dashboard Cite

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Quantum size effects in n-PbTe∕p-SnTe∕n-PbTe heterostructures

Cited by 61 publications

References 20 publications

Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

Quantum size effects in a one-dimensional semimetal

Experimental Observation of Dirac-like Surface States and Topological Phase Transition inPb1−xSnxTe(111)Yan1, Liu2, Zang3 et al. 2014Phys. Rev. Lett.1177860View full textAdd to dashboardCite

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Experimental Observation of Dirac-like Surface States and Topological Phase Transition inPb1−xSnxTe(111)
Yan¹,
Liu
²
,
Zang
³

et al. 2014
Phys. Rev. Lett.
117
7
86
0
View full text Add to dashboard Cite