2001
DOI: 10.1143/jjap.40.4299
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Quantum Size Effects in Low-Temperature Growth of Pb Islands on Si(111)7×7 Surfaces

Abstract: Flat-top Pb islands with critical and magic thickness have been observed in the Pb/Si(111)7 × 7 system at 200 K by scanning tunneling microscopy. The growth behavior, different from that in the Stranski-Krastanov mode, arises from a quantum size effect. Quantized states are detected in the current-voltage (I -V ) spectra on the Pb islands of varying thickness. Our observation of asymmetrical and oscillatory relaxation in the island thickness reveals that the charge distribution of confined electrons can influe… Show more

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Cited by 5 publications
(7 citation statements)
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“…Our finding is that the method overestimates the distance between the confinement barriers. This may explain the large values 11,[21][22][23] obtained by this scheme in comparison to other experiments. [7][8][9] The reason for this disagreement is the basic fact that Eqs.…”
Section: ͑6͒supporting
confidence: 55%
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“…Our finding is that the method overestimates the distance between the confinement barriers. This may explain the large values 11,[21][22][23] obtained by this scheme in comparison to other experiments. [7][8][9] The reason for this disagreement is the basic fact that Eqs.…”
Section: ͑6͒supporting
confidence: 55%
“…There are also recent STS measurements of QWS's in the Pb layers on Si(111). 11,20,21 In these studies the overlayers are thinner and the QWS energy range is smaller than in the Pb/Cu(111) measurements by Otero et. al.…”
Section: Introductionmentioning
confidence: 72%
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