2009
DOI: 10.1103/physrevb.80.155329
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Quantum size effects in competing charge and spin orderings of dangling bond wires on Si(001)

Abstract: Using spin-polarized density-functional theory calculations, we investigate the competition between charge and spin orderings in dangling-bond ͑DB͒ wires of increasing lengths fabricated on an H-terminated Si͑001͒ surface. For wires containing less than ten DBs as studied in recent experiments, we find antiferromagnetic ͑AF͒ ordering to be energetically much more favorable than charge ordering. The energy preference of AF ordering shrinks in an oscillatory way as the wire length increases and preserves its sig… Show more

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Cited by 25 publications
(56 citation statements)
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“…We find that the NM configuration is more stable than the AFM configuration by 28 meV/DB. This result is different from our previous 22 result for the DB wire formed on the H-passivated Si(001) surface, where the AFM configuration is slightly favored over the NM configuration by 8 meV/DB. This different energetics of the NM and AFM configurations between the D B step and the H-passivated Si(001) surface may be attributed to more delocalized character of DB electrons at the D B step, as discussed below.…”
Section: Resultscontrasting
confidence: 99%
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“…We find that the NM configuration is more stable than the AFM configuration by 28 meV/DB. This result is different from our previous 22 result for the DB wire formed on the H-passivated Si(001) surface, where the AFM configuration is slightly favored over the NM configuration by 8 meV/DB. This different energetics of the NM and AFM configurations between the D B step and the H-passivated Si(001) surface may be attributed to more delocalized character of DB electrons at the D B step, as discussed below.…”
Section: Resultscontrasting
confidence: 99%
“…Okada et al 26 predicted a ferrimagnetic spin ordering in various DB networks created on an H-passivated Si(111) surface. Similarly, Lee et al 22 predicted an AFM spin ordering in DB wires fabricated on an H-passivated Si(001) surface. On the basis of these previous studies, we speculate that the delocalization of DB electrons at the D B step could be prevented by passivating the terrace with atomic H [see Figs.…”
Section: Resultsmentioning
confidence: 79%
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