Quantum size effect in self-organized InAs/GaAs quantum dots

Heitz, R.; Stier, O.; Mukhametzhanov, I.; Madhukar, A.; Bimberg, D.

doi:10.1103/physrevb.62.11017

Cited by 107 publications

(109 citation statements)

References 50 publications

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“…69,75,76 At the same time, the large energy spacing between the ground and the excited orbital ͑10 −2 -10 −1 eV͒ of the quantum dots ensures that the electron qubit stays in the ground orbital while the two-qubit operation is conducted. 70 This result shows that the electronnuclear spin interaction does not hinder quantum-dot based quantum computer architectures from being scalable even in the presence of inhomogeneous environments causing inhomogeneous hyperfine splittings.…”

Section: Discussionmentioning

confidence: 51%

“…The electron energy spacing ⌬E e of a self-assembled dot is about 10 −2 -10 −1 eV, depending on the geometry and size of the dot. 70 Therefore, the value of J that satisfies the dual condition lies between 10 −4 and 10 −3 eV, which is achievable with vertically stacked self-assembled dots. In conclusion, with J between 10 −4 and 10 −3 eV, the error due to hyperfine-coupling induced inhomogeneities in Zeeman energies is smaller than the threshold for error correction, and the qubit leakage to higher orbitals can be effectively prevented.…”

Section: Effect Of Electron-nuclear Spin Interaction On Qubit Opementioning

confidence: 99%

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Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

Lee

Allmen

Oyafuso

et al. 2005

Journal of Applied Physics

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Lee, Seungwon; von Allmen, Paul; Oyafuso, Fabiano; and Klimeck, Gerhard, "Effect of electron-nuclear spin interactions for electronspin qubits localized in InGaAs self-assembled quantum dots" (2005 The effect of electron-nuclear spin interactions on qubit operations is investigated for a qubit represented by the spin of an electron localized in an InGaAs self-assembled quantum dot. The localized electron wave function is evaluated within the atomistic tight-binding model. The electron Zeeman splitting induced by the electron-nuclear spin interaction is estimated in the presence of an inhomogeneous environment characterized by a random nuclear spin configuration, by the dot-size distribution, alloy disorder, and interface disorder. Due to these inhomogeneities, the electron Zeeman splitting varies from one qubit to another by the order of 10 −6 , 10 −6 , 10 −7 , and 10 −9 eV, respectively. Such fluctuations cause errors in exchange operations due to the inequality of the Zeeman splitting between two qubits. However, the error can be made lower than the quantum error threshold if an exchange energy larger than 10 −4 eV is used for the operation. This result shows that the electron-nuclear spin interaction does not hinder quantum-dot based quantum computer architectures from being scalable even in the presence of inhomogeneous environments.

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Section: Discussionmentioning

confidence: 51%

Section: Effect Of Electron-nuclear Spin Interaction On Qubit Opementioning

confidence: 99%

Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

Lee

Allmen

Oyafuso

et al. 2005

Journal of Applied Physics

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“…This indicates that electrons are confined in a parabolic-like potential within the lens-shaped QDs. 31,32 It can be noted in Fig. 7 that the experimentally observed temperature dependence of the optical transition energies (symbols) fit fairly well with the semi-empirical Varshni expression 33 …”

Section: Temperature-dependent Photoreflectance Spectrasupporting

confidence: 48%

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Nedzinskas

Čechavičius

Rimkus

et al. 2015

Journal of Applied Physics

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We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD) photodetector structures, incorporating InGaAs overgrown layers and positioned asymmetrically within GaAs/AlAs quantum wells (QWs). The influence of the back-surface reflections on the QD PR spectra is explained and a temperature-dependent photomodulation mechanism is discussed. The optical interband transitions originating from the QD/QW ground-and excited-states are revealed and their temperature behaviour in the range of 3-300 K is established. In particular, we estimated the activation energy ($320 meV) of exciton thermal escape from QD to QW bound-states at high temperatures. Furthermore, from the obtained Varshni parameters, a strain-driven partial decomposition of the InGaAs cap layer is determined. V C 2015 AIP Publishing LLC.

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“…15 The continuous shift was caused by the presence of extended states in high-density QD clusters without, however, any FIG. 1.…”

Section: Macro-pl: Excitation Power Density Dependencementioning

confidence: 99%

Extended electron states in lateral quantum dot molecules investigated with photoluminescence

2007

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Quantum size effect in self-organized InAs/GaAs quantum dots

Cited by 107 publications

References 50 publications

Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Extended electron states in lateral quantum dot molecules investigated with photoluminescence

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