Quantum-size and deformation effects in and structures

Valeiko, M. V.; Zasavitskiǐ, I. I.; Матвеенко, А. В.; Matsonashvili, B. N.; Rukhadze, Z.A.

doi:10.1016/0749-6036(91)90282-v

Cited by 26 publications

(23 citation statements)

References 12 publications

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“…12 However, considerable discrepancies still remain among the experimental and theoretical data for the optical deformation potentials D d and D u . In particular, with a few exceptions, 7,8,11 most D d and D u values do not agree with the isotropic (volume) deformation potential D iso =3D d + D u , determined with good accuracy from hydrostatic pressure experiments at different temperatures. 7,8,[13][14][15] On the other hand, previous optical studies of IV-VI strained structures [7][8][9][10][11] were based on the model that in these structures the lowest energy transition belongs to the normal (longitudinal) valley.…”

Section: Introductionmentioning

confidence: 97%

“…Further magnetooptical studies of epitaxial films 5 and superlattices 6 allowed determination of the deformation potential constants for PbTe using a fitting procedure with many unknown band parameters. Recently, somewhat different values for PbTe [7][8][9][10][11] and PbSe 8,12 have been obtained from photoluminescence (PL) and absorption measurements of MQW structures. Similar optical deformation potential values for PbSe were obtained from photoluminescence measurements of PbSe/ PbEuSe structures with triangular quantum wells 8 and absorption measurements of PbSe/ PbSrSe structures with parabolic quantum wells.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, somewhat different values for PbTe [7][8][9][10][11] and PbSe 8,12 have been obtained from photoluminescence (PL) and absorption measurements of MQW structures. Similar optical deformation potential values for PbSe were obtained from photoluminescence measurements of PbSe/ PbEuSe structures with triangular quantum wells 8 and absorption measurements of PbSe/ PbSrSe structures with parabolic quantum wells. 12 However, considerable discrepancies still remain among the experimental and theoretical data for the optical deformation potentials D d and D u .…”

Section: Introductionmentioning

confidence: 99%

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Optical deformation potentials for PbSe and PbTe

et al. 2004

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The values of optical deformation potentials (D u and D d ) for PbSe and PbTe are analyzed using absorption, luminescence and x-ray diffraction data on high quality, deep quantum well PbSe/ PbSrSe and PbTe/ PbEuTe structures. Published optical data on PbTe/ BaF 2 structures were also used. It is important for these evaluations to use the value of isotropic deformation potential ͑D iso ͒ which is determined from the low temperature hydrostatic pressure experiments and the intervalley splitting which was determined from differential absorption spectroscopy. The fitting procedure was done using an accurate k · p model for the band structure near the fundamental gap including anisotropy, multivalley, and band nonparabolicity effects. Photoluminescence was measured in pulsed mode at 4 and 77 K, which gives the lowest energy state in the rectangular well. The strain and well parameters were measured with a high resolution x-ray diffractometer. We find the new optical deformation potential values at low temperatures: D u = −0.2 and −0.5 eV, and D d = 5.3 and 3.5 eV for PbSe and PbTe, respectively.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical deformation potentials for PbSe and PbTe

et al. 2004

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“…While for the PbSe/PbSrSe 12,13 and PbTe/PbEuTe 14 systems, a type I alignment has been established at temperatures up to 300 K, controversial results have been reported for the PbSe/PbEuSe system, where some experiments were interpreted as giving evidence for a staggered type II band alignment, 15,16 while others have indicated an almost symmetric type I configuration. 17,18 Moreover, a pronounced temperature dependence, changing from type I at low temperatures to staggered type II above 180 K has been proposed. 15,16 This has been used to explain the lower high-temperature performance of PbSe/ PbEuSe lasers compared to those using PbSe/PbSrSe.…”

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confidence: 99%

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

Simma

Bauer

Springholz

2012

Applied Physics Letters

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The band offsets of PbSe/Pb1−xEuxSe multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k·p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45±0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

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“…Inside the layer, far from its edges, the tensile strain is uniformly biaxial and lifts the fourfold degeneracy of the L states in the conduction band. In particular, the [111] valley which has its main axis oriented parallel to the growth direction is shifted downward in energy with respect to the three remaining valleys oriented with their main axes obliquely to the growth direction [6,7]. In the n-type material, this shift leads to modiflcation of the carrier distribution between the valleys.…”

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confidence: 99%

Conductance Anomalies in Strained Quantum Wires: the Case of PbSe and PbTe

Grabecki¹,

Wróbel²,

Dietl³

et al. 1996

Acta Phys. Pol. A

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We show that conducting edge channels are formed in free standing wires of PbSe/BaF 2 and PbTe/BaF2 as temperature is lowered. The effect results from spatially inhomogeneous strain caused by a difference between the thermal expansion coefficients of the epilayer and the substrate. The presence of the edge channels can explain anomalous mesoscopic effects observed previously in these wires.PACS numbers: 71.55.Jv Recent works [1,2] have shown that the magnetoconductance of Mall bridges patterned from epitaxial films of PbSe and PbTe grown on a BaF2 substrate exhibits a number of novel features. In particular, the aperiodic conductance fluctuations which occur at low temperatures cannot be described within the framework of theory of universal conductance fluctuations (UCF) [3]. In particular, the fluctuation amplitude is about 10 times greater than that predicted by the theory, and the correlation function of the fluctuations gives the size of the coherence regions smaller than the mean free path for elastic scattering [1].In order to shed some light on this phenomenon, we have undertaken new systematic studies of conductance phenomena in microstructures of both PbSe and PbTe. PbSe films with (111) orientation and thickness of about 1.7 μm were deposited by MBE directly onto the BaF 2 substrate. The microstuctures were fabricated by photolithography and Ar ion milling. PbTe : Bi films with (111) (797)

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Quantum-size and deformation effects in and structures

Cited by 26 publications

References 12 publications

Optical deformation potentials for PbSe and PbTe

Optical deformation potentials for PbSe and PbTe

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

Conductance Anomalies in Strained Quantum Wires: the Case of PbSe and PbTe

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