2014
DOI: 10.1103/physreva.90.010103
|View full text |Cite
|
Sign up to set email alerts
|

Quantum process tomography of a Mølmer-Sørensen interaction

Abstract: We report the quantum process tomography of a Mølmer-Sørensen entangling gate. The tomographic protocol relies on a single discriminatory transition, exploiting excess micromotion in the trap to realize all operations required to prepare all input states and analyze all output states. Using a master-slave diode lasers setup, we demonstrate a two-qubit entangling gate, with a fidelity of Bell state production of 0.985(10). We characterize its χ-process matrix, the simplest for an entanglement gate on a separabl… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
35
1

Year Published

2015
2015
2023
2023

Publication Types

Select...
6
2

Relationship

1
7

Authors

Journals

citations
Cited by 26 publications
(36 citation statements)
references
References 31 publications
0
35
1
Order By: Relevance
“…The two operations discussed above: two-qubit collective rotations and individual addressing of only one qubit are sufficient in the case of a two-qubit register to perform any single qubit gate. As an example in [35] we have used this scheme to perform complete quantum process tomography for the MS two qubit gate. In principle the use of the spatially varying electric field and micromotion induced sidebands can be generalized to more than two ions by introducing the concept of dressed-state picture [34].…”
Section: Single-qubit Gatementioning
confidence: 99%
“…The two operations discussed above: two-qubit collective rotations and individual addressing of only one qubit are sufficient in the case of a two-qubit register to perform any single qubit gate. As an example in [35] we have used this scheme to perform complete quantum process tomography for the MS two qubit gate. In principle the use of the spatially varying electric field and micromotion induced sidebands can be generalized to more than two ions by introducing the concept of dressed-state picture [34].…”
Section: Single-qubit Gatementioning
confidence: 99%
“…Simulating all the terms but equation (17) yields infidelity of = × − IF 3 10 4 ( figure 5), getting closer to the fault tolerance threshold. For these suggested parameters, the contributions of the coupling terms, equations (23) and (24), correspond to infidelity of × − 1.2 10 5 and × − 5 10 5 , respectively.…”
Section: Calculating the Neglected Termsmentioning
confidence: 99%
“…Many theoretical proposals for quantum entangling gates have been considered for trapped ions [2][3][4][5][6][7][8][9][10][11], one of the most promising candidates for QIP [12][13][14]. These proposals have triggered impressive experimental realizations [15][16][17][18][19][20][21][22][23][24][25]. Although these experiments within the laser based designs have achieved high fidelities [16,[22][23][24][25], the achieved fidelities within the microwave based designs have been limited.Considerable theoretical efforts have been made to counter the fidelity-damaging effects.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…Entangling gates with trapped ions-Entangling gates with trapped ions are realized using the Mølmer-Sørensen (MS) scheme [13][14][15][16][17][18][19][20][21], which is constructed out of the following interaction: vibrational phonon, Ω is the sideband Rabi frequency, and ε = ω d − ν is the detuning of the driving field from the secular frequency. During the MS gate operation, the two spins are entangled to the vibrational phonon, which generates the entanglement between the two spins.…”
mentioning
confidence: 99%