Quantum photonics in triangular-cross-section nanodevices in silicon carbide

Majety, Sridhar; Norman, Victoria; Li, Liang; Bell, Miranda; Saha, Pranta; Radulaski, Marina

doi:10.1088/2515-7647/abfdca

Cited by 19 publications

(20 citation statements)

References 78 publications

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“…Using angle etching techniques to fabricate triangular waveguides, color centers were integrated within the waveguide with similar optical and spin-properties of the pristine material, permitting quantum gates operation using nuclear spins coupled with single V Si spin defects . The triangular waveguides geometry has been studied for the future aim to fabricate high cooperativity photonic cavities …”

Section: Photonic Technologiesmentioning

confidence: 99%

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Silicon Carbide Photonics Bridging Quantum Technology

et al. 2022

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In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in highpower and high-frequency applications. Recent research has revealed that SiC also exhibits unique optical properties that can be utilized for novel photonic devices. SiC is a transparent material from the UV to the infrared, possess nonlinear optical properties from the visible to the mid-infrared and it is a meta-material in the mid-infrared range. SiC fluorescence due to color centers can be associated with single photon emitters and can be used as spin qubits for quantum computation and communication networks and quantum sensing. This unique combination of excellent electronic, photonic and spintronic properties has prompted research to develop novel devices and sensors in the quantum technology domain. In this perspective, we highlight progress, current trends and prospects of SiC science and technology underpinning the development of classical and quantum photonic devices. Specifically, we lay out the main steps recently undertaken to achieve high quality photonic components, and outline some of the current challenges SiC faces to establish its relevance as a viable photonic technology. We will also focus on its unique potential to bridge the gap between classical and quantum photonics, and to technologically advance quantum sensing applications. We will finally provide an outlook on possible alternative applications where photonics, electronics, and spintronics could merge.

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Section: Photonic Technologiesmentioning

confidence: 99%

“…Nonlinear harmonic generation (third harmonic and four wave mixing based on χ (3) , and second harmonic and SPDC based on χ (2) ). Photonic technologies: 1D triangular cross-section photonic crystal; image reprinted in part with permission from ref . Copyright 2021 Institute of Physics under .…”

Section: Introductionmentioning

confidence: 99%

Silicon Carbide Photonics Bridging Quantum Technology

et al. 2022

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“…An ensemble integrated into the cavity is likely to have a variation in individual emitter-cavity coupling rates. Scaling these systems into an array, photonic designs of coupled cavities have been proposed for a range of hopping rates 1 GHz < J/2π < 200 GHz [15]. Variation of nanofabrication conditions across the sample may cause a variation in resonant frequencies of each cavity, however, methods such as photo-oxidation [25] can be used to shift resonances and synchronize the system.…”

Section: Experimental Parametersmentioning

confidence: 99%

“…The most common material substrates for this purpose are silicon carbide and diamond. For example, [15] describes a photonic crystal cavity with a triangular cross-section, fabricated in a silicon carbide substrate with various possible color centers.…”

Section: Introductionmentioning

confidence: 99%

Effect of Emitters on Quantum State Transfer in Coupled Cavity Arrays

Baum,

Broman,

Clarke

et al. 2021

Preprint

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Over the last decade, considerable work has been done on quantum state transfer along one dimensional arrays of coupled qubits, as modeled by quantum spin chains. Protocols for perfect quantum state transfer, requiring 'full engineering' of the exchange constants Ji have been discovered. The degradation induced by the inevitable disorder ∆Ji present in any experimental realization has also been discussed. In this paper, we consider an extension of such studies to quantum state transfer in a coupled cavity array including the effects of atoms in the cavities which can absorb and emit photons as they propagate down the array. Our model is equivalent to previously examined spin chains in the one-excitation sector and in the absence of emitters. We introduce a Monte Carlo approach to the inverse eigenvalue problem which allows the determination of the inter-cavity and cavity-emitter couplings resulting in near-perfect quantum state transfer fidelity, and examine the time dependent polariton wave function through exact diagonalization of the resulting Tavis-Cummings-Hubbard Hamiltonian. The effect of inhomogeneous emitter locations is also evaluated.

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“…In addition, very few experiments [15,16] and no theoretical studies (to the best of our knowledge), which are usually performed in bulk SiC, have probed surface and/or finite size-effects, even though shallower defects are desirable for sensing applications. These effects also become important when the quantum emitters are placed in optical nanophotonic cavities [17][18][19][20][21], nanoscale solid immersion lenses [22], and arrays of nanopillars [4,5,23]. In such nanofabricated devices, inevitably there will be defects close to surfaces or sidewalls.…”

Section: Introductionmentioning

confidence: 99%

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Joshi,

Dev

2021

Preprint

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Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated nanostructures that modify defect properties due to surface and quantum confinement effects. Thus far, theoretical studies exploring deep defects in SiC have ignored these effects. Using density functional theory, this work demonstrates site-dependence of properties of bright, negatively-charged silicon monovacancies within a SiC nanowire. It is shown that the optical properties of defects depend strongly on the hybridization of the defect states with the surface states and on the structural changes allowed by proximity to the surfaces. Additionally, the analysis of the first principles results indicates that the charge-state conversion and/or migration to thermodynamically-favorable undercoordinated surface sites can deteriorate deep-defect properties. These results illustrate the importance of considering how finite-size effects tune defect properties, and of creating mitigating protocols to ensure a defect's charge-state stability within nanostructured hosts.

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Quantum photonics in triangular-cross-section nanodevices in silicon carbide

Cited by 19 publications

References 78 publications

Silicon Carbide Photonics Bridging Quantum Technology

Silicon Carbide Photonics Bridging Quantum Technology

Effect of Emitters on Quantum State Transfer in Coupled Cavity Arrays

Site-dependent properties of quantum emitters in nanostructured silicon carbide

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