2012
DOI: 10.1063/1.4764066
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Quantum phase slips in superconducting Nb nanowire networks deposited on self-assembled Si templates

Abstract: Robust porous silicon substrates were employed for generating interconnected networks of superconducting ultrathin Nb nanowires. Scanning electron microscopy analysis was performed to investigate the morphology of the samples, which constitute of polycrystalline single wires with grain size of about 10 nm. The samples exhibit nonzero resistance over a broad temperature range below the critical temperature, fingerprint of phase slippage processes. The transport data are satisfactory reproduced by models describ… Show more

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Cited by 25 publications
(55 citation statements)
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References 38 publications
(77 reference statements)
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“…[19] The obtained value, L ≈ 70 nm, appears to be rather small if directly compared to the estimated length, around 10 µm, of a single continuous nanowire present in the network. This discrepancy could be explained considering that L is not a quantity which can be strictly defined for the network.…”
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confidence: 99%
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“…[19] The obtained value, L ≈ 70 nm, appears to be rather small if directly compared to the estimated length, around 10 µm, of a single continuous nanowire present in the network. This discrepancy could be explained considering that L is not a quantity which can be strictly defined for the network.…”
mentioning
confidence: 99%
“…[19] As a consequence, also the zero temperature depairing current density [26] of the single wire j dp (0) = j dp (t)(1 − t) −1.5 ∼ [i dp (t)(1 − t) −1.5 ]/σ 2 ≃ 1.9 × 10 10 A/m 2 is comparable to the one reported in the case of the network with N = 250 and in the case of perforated Nb films. [19,27] This result indicates that the further reduction of N does not significantly depress the superconducting properties of the single wire and confirms, again, the good quality of the sample ruling out the presence of tunneling barriers at the grain boundaries. [16] In Fig.…”
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confidence: 99%
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